The Effect of Gate Dielectric Al2O3/ZnO on Interface Quality with N-GaAs

摘要

In this paper, The Effect of Gate Dielectric Al2O3/ZnO on Interface Quality with N-GaAs has been investigated. The results measured by X-ray photoelectron spectroscopy show that the presence of ZnO can effectively suppress the formation of oxides at the interface between the GaAs and Al2O3. Using Terman method, the interface trap density has been extracted from C-V curves. It is found that the ZnO layer can effectively improve the interface quality.