The Effect of Gate Dielectric Al2O3/ZnO on Interface Quality with N-GaAs

机译：栅介质Al2O3 / ZnO对N-GaAs界面质量的影响。

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摘要

/ZnO on Interface Quality with N-GaAs has been investigated. The results measured by X-ray photoelectron spectroscopy show that the presence of ZnO can effectively suppress the formation of oxides at the interface between the GaAs and Al

机译：/ ZnO对N-GaAs界面质量的研究。 X射线光电子能谱测量的结果表明，ZnO的存在可以有效地抑制GaAs与Al之间的界面处氧化物的形成

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《IEEE International Conference on Solid-State and Integrated Circuit Technology;ICSICT-2012》|2012年|p.1-3|共3页
会议地点 Xi'an(CN);Xi'an(CN)
作者
Chen, Liu; Zhang, Yu-Ming; Lu, Hong-liang; Zhang, Yi-Men;
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School of Microelectronics Xidian University Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Xi'an 710071 China;

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关键词
ALD; GaAs metal-oxide-semiconductor capacitor; interface trap density;

机译：ALD; GaAs金属氧化物半导体电容器；界面陷阱密度;

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4. The Effect of Gate Dielectric Al2O3/ZnO on Interface Quality with N-GaAs [C] . Chen Liu, Zhang Yu-Ming, Lu Hong-liang, International Conference on Solid-State and Integrated Circuit Technology . 2012

机译：栅极电介质AL2O3 / ZNO对N-GaAs界面质量的影响
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The Effect of Gate Dielectric Al2O3/ZnO on Interface Quality with N-GaAs

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