Selective epitaxial growth of silicon by LPCVD can be considered as the special process that occurs successfully under the dynamic equilibrium status reached by the rapid homogeneous reactions. The concept could make us understand the selective epitaxial growth of silicon and verify its condition, using a thermodynamic calculation tool, the free energy minimization method. In this study, we dealt with various items on SEG; in-situ cleaning condition, in-situ doping behavior, SEG process diagrams, improvement of selectivity, hydrogen effect, and a non-equilibrium factor. Predictions obtained from thermodynamic analyses were found to be in good consistent with our experimental data.
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