Properties of n-and p-channel mosfets with ultrathin rtcvd oxynitride gatedielectrics

摘要

A detailed study of the electrical properties of n-channel and p-channel MOSFETs with ultra-thin (2.0 nm to 3.0 nm) N_2O annealed Rapid Thermal Chemical Vapor Deposited (RTCVD) oxynitrides and Rapid Thermal Oxides (RTO) is presented. The characterization methodologies for capacitance-voltage, effective mobility, tunneling and reliability were critically analyzed to provide meaningful comparisons of the dielectrics. The results of the characterization indicate that an ultra-thin RTCVD oxynitride with N_2O anneal stops boron penetration, has comparable channel mobility and reliability, and has lower tunnel current as compared to RTO.