PROCESS FOR FORMING ULTRATHIN OXYNITRIDE LAYERS AND THIN LAYER DEVICES CONTAINING ULTRATHIN OXYNITRIDE LAYERS

摘要

A method of forming an oxynitride gate dielectric layer is disclosed. The oxynitride layer is formed by thermally growing an oxide layer under an atmosphere of nitric oxide and nitrous oxide. The oxynitride layer suppresses boron diffusion from the overlaying electrode.