Hf-doped silicon oxynitride layer ultrathin and a manufacturing method for high-performance CMOS applications

摘要

Topic Hf for advanced CMOS use the pole which is doped thin offer the acid silicon nitride membrane and its production method.Solutions Being the semiconductor structure and the method of forming this, this method, based gate dielectric layer (53) the step which forms the uniform buffer layer of the spread control material which is stabilized on top and, next, the step which forms the uniform layer which contains the source of the transition metal atom and, next, annealing doing this structure, based gate dielectric layer (53) the step which it spreads and, includes the transition metal atom, through the spread control material from the source. Selective figure Figure 5