ULTRA-THIN HF-DOPED SILICON OXYNITRIDE FILM FOR HIGH PERFORMANCE CMOS APPLICATIONS AND METHOD OF MANUFACTURE

摘要

A semiconductor structure and method of forming the same, comprising forming a uniform buffer layer of diffusion-controUing stable material on top of a base gate dielectric layer (53), and then forming a uniform layer which contains a source of transitional metal atoms, and then annealing the structure to diffuse the transitional metal atoms from their source through the diffusion-controlling material and into the base gate dielectric layer (53).