High performance InAlAs/InGaAs/InP HEMT/MSM-based OEICphotoreceivers

摘要

A high-speed, monolithically integrated photoreceiver suitable for1.55 μm wavelength optical communication systems is described. Thetunable photoreceiver, implemented using a metal-semiconductor-metal(MSM) photodetector and InAlAs/InGaAs/InP high electron mobilitytransistor (HEMT)-based transimpedance amplifier, exhibits -3 dBbandwidths of up to 17 GHz. Noise measurements revealed aninput-referred noise current spectral density of 8 pA/Hz1/2when tuned for 10 Gb/s operation, and 12 pA/Hz1/2 when tunedfor 20 Gb/s operation. This results in a projected sensitivity of -16.5dBm and -12.3 dBm at 10 and 20 Gb/s, respectively, for a bit error rateof 1×10-9