A self-consistent model for small-signal parameters and noise performance of InAlAs/InGaAs/InAlAs/InP HEMTs

摘要

An analytical model to evaluate device's quantum well (QW) properties, current-voltage (Ⅰ-Ⅴ) characteristics, small-signal parameters and noise property for InAlAs/InGaAs/InAlAs/InP high electron mobility transistors is presented. A self-consistent solution of Schroedinger and Poisson's equations is used to calculate the QW properties formed in the InGaAs layer (conduction channel) as well as an analytical velocity-electric field (v_d-E) characteristics to evaluate device's Ⅰ-Ⅴ characteristics, small-signal parameters and noise performance. In this paper, the calculation results of device performance for this class of devices are compared with experimental data and the results show good agreement.