Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs

著录项

• 来源
  《中国物理：英文版》 |2021年第1期|667-674|共8页
• 作者

  Zhi-Hang Tong; Peng Ding; Yong-Bo Su; Da-Hai Wang; Zhi Jin;

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• 作者单位

  High-Frequency High-Voltage Device and Integrated Circuits Center Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China;

  University of Chinese Academic of Sciences Beijing 100049 China;

  High-Frequency High-Voltage Device and Integrated Circuits Center Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China;

  University of Chinese Academic of Sciences Beijing 100049 China;

  High-Frequency High-Voltage Device and Integrated Circuits Center Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China;

  University of Chinese Academic of Sciences Beijing 100049 China;

  High-Frequency High-Voltage Device and Integrated Circuits Center Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China;

  High-Frequency High-Voltage Device and Integrated Circuits Center Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China;

  University of Chinese Academic of Sciences Beijing 100049 China;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
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