首页> 外文会议>Electronic Components and Technology Conference, 2001. Proceedings., 51st >Room-temperature interconnection of electroplated Au microbump bymeans of surface activated bonding method
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Room-temperature interconnection of electroplated Au microbump bymeans of surface activated bonding method

机译:电镀金微凸块的室温互连。表面活化键合方法

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Although various bonding methods have been developed for flip-chipassembly, most of them cannot be applied to smaller pitchinterconnection for the next generation. In the present study, a newbonding method, the surface activated bonding (SAB) is introduced. Thefeasibility of the SAB for bump bonding was investigated by someexperiments. The Au electroplated bumps were prepared for experiments.The three different types of material, Au, Cu, and Al were used ascontact metals. The reliability of interconnections was tested intemperature storage. As a result, we could achieved the bonding ofmicrobumps with high strength and good electrical connection. It wasalso found that in the case of bump bonding, SAB can be done underrelatively high vacuum pressure condition
机译:尽管已经为倒装芯片开发了各种键合方法 组装,其中大多数不能应用于较小的间距 下一代互连。在本研究中, 键合方法,介绍了表面活化键合(SAB)。这 一些人研究了SAB凸点焊接的可行性 实验。准备用于实验的Au电镀凸块。 三种不同类型的材料Au,Cu和Al被用作 接触金属。互连的可靠性已在 温度存储。结果,我们可以实现 微型凸块具有高强度和良好的电气连接。它是 还发现在凸点接合的情况下,SAB可以在 相对较高的真空压力条件

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