Dynamic NBTI simulation coupling with self-heating effect in SOI MOSFETs

摘要

A methodology for simulating the device performance degradation considering the coupling effect of NBTI and SHE in SOI p-MOSFETs is proposed. NBTI models and thermal network are implanted into HiSIM with instantaneous parameter update during the transient simulation. The simulation results show that decoupling simulation will lead to non-ignorable inaccuracy.