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机译:应变硅SOI晶片中制造的SOI p-MOSFET的NBTI和热载流子效应
Department of Electronics Engineering, University of Incheon, #177 Dohwa-Dong Nam-Gu, Incheon 402-749, Republic of Korea;
Department of Electronics Engineering, University of Incheon, #177 Dohwa-Dong Nam-Gu, Incheon 402-749, Republic of Korea;
Department of Electronics Engineering, University of Incheon, #177 Dohwa-Dong Nam-Gu, Incheon 402-749, Republic of Korea;
Department of Electronic Materials Engineering, Kwangwoon University, #447-1 Wolgye-Dong Nowon-Gu, Seoul, Republic of Korea;
Department of Electrical and Computer Engineering, University of California, Davis, CA, USA;
Department of Electronics Engineering, University of Incheon, #177 Dohwa-Dong Nam-Gu, Incheon 402-749, Republic of Korea;
机译:在改性晶片上制造的部分耗尽SOI pMOSFET的异常热载流子效应分析
机译:在SOI岛中制造的全耗尽双栅极薄膜SOI P-MOSFET,具有隔离的掩埋多晶硅背栅
机译:热载波降解对应变Si P-MOSFET中低频噪声的影响
机译:利用反向偏置研究SOI和应变SOI晶体管的热载流子可靠性
机译:绝缘体上硅(SOI)MOSFET的热载流子可靠性及其在非易失性存储器中的应用。
机译:在氨气存在下用高功率超声处理过的土壤泥浆制备的土壤循环土聚合物
机译:在改进的晶片上制造的130nm部分耗尽的SOI PMOSFET中由热载体注射诱导的降解
机译:采用0.25微米全耗尽sOI CmOs工艺制造的晶体管的热载流子可靠性