High temperature wireless packaging of SiC power device by organic-free die-attach material sintering

摘要

This paper presents a wireless packaging design for SiC power device in order to improve junction temperature (Tj) and high-power-density reliability. Organic-free die attach material was employed to bond Cu ribbon frame for lowering inductance and increasing service temperature. Long time power cycling test was performed (ton=20s, DeltaTj>20 °C) to evaluate packaging reliability. Thermal stress induced cracks expanded over cycles and caused the final failure because of the different thermal expansion coefficient (CTE). This high-temperature packaging design should be suitable for HEV/EV, aerospace or other harsh environment applications.