A G-band Balanced Power Amplifier based on InP HEMT Technology

摘要

In this paper, a G-band monolithic integrated power amplifier based on InP HEMT technology is presented. The 3-stage amplifier is designed using a balanced topology with Tan-dem-X couplers, which greatly improve InPut and output voltage standing wave ratio (VSWR) while power combining. All impedance matching of the amplifier is done by grounded coplanar planar waveguide (GCPW) transmission lines for transmission loss reduction and parasitic substrate modes suppression. Through the accurate electromagnetic simulation by Sonnet's 3D Planar Electromagnetic software, the amplifier demonstrates a small signal gain of 12dB at 210GHz. The 3-dB compression saturated output power of 40mW is achieved at 215 GHz when an InPut signal of 5mW is injected. The InPut and output return loss are greater than 20dB.