HEMT component on InP base with Schottky barrier with variable aluminium percentage content has lower layer with first aluminium content, per layer with higher concentration region

摘要

The component has a lower layer composed of a first material with a first percentage aluminium content and an upper layer arranged on the lower layer, whereby one region of the upper layer is made up of a second material with a second percentage aluminium content greater than the first. The aluminium content in the upper layer varies over the thickness of the upper layer from a first value near the lower layer to a second value close to the second percentage content at a distance from the lower layer. Independent claims are also included for a Schottky barrier, a method of producing a Schottky barrier, and a method of manufacture of a HEMT