首页>外文会议>Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

召开年：1994
召开地：Santa Barbara, CA
出版时间：-

会议文集：-

会议论文

热门论文

全部论文

全选（0）

1.In-situ monitoring and control for the growth of highly reproducible VCSEL structures

机译：原位监测和控制高度可复制的VCSEL结构的生长
- 作者：Houng;Y.M.;Tan;M.R.T.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
2.Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

机译：1994年IEEE第6届国际铟磷及相关材料会议（IPRM）会议录
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
3.Wafer bonding of InP and GaAs: interface characterization and device applications

机译：InP和GaAs的晶圆键合：接口表征和器件应用
- 作者：Yang;L.;Carey;K.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
4.Analysis of T/sub 0/ in 1.3 /spl mu/m multi-quantum well and bulk active lasers

机译：1.3 / spl mu / m多量子阱和体有源激光器中T / sub 0 /的分析
- 作者：Ackerman;D.A.;Morton;P.A.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
5.Growth of silicon and beryllium doped InP by MBE using solid phosphorus

机译：MBE使用固体磷生长硅和铍掺杂的InP
- 作者：Baillargeon;J.N.;Cho;A.Y.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
6.High power hybrid pulse source

机译：大功率混合脉冲源
- 作者：Morton P.A.;Mizrahi V.;Tanbun-Ek T.;Logan R.A.;Lemaire P.;Erdogan T.;Sciortino P.F. Jr.;Sergent A.M.;Wecht K.W.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
7.High static performance polarization insensitive strained InGaAsP/InGaAsP MQW electroabsorption modulator grown by atmospheric pressure MOVPE

机译：大气压MOVPE生长的高静态性能极化不敏感应变InGaAsP / InGaAsP MQW电吸收调制器
- 作者：Ougazzaden;A.;Mircea;A.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
8.High temperature performance of strained quaternary quantum well lasers

机译：应变四元量子阱激光器的高温性能
- 作者：Temkin;H.;Coblentz;D.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
9.Low pressure pyrolysis of alternative phosphorous precursors for chemical beam epitaxial growth of InP and related compounds

机译：低压热解替代磷前体，用于InP及其相关化合物的化学束外延生长
- 作者：Hill;C.W.;Stringfellow;G.B.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
10.Low threshold, high quantum efficiency, high speed strain compensated multiquantum well lasers

机译：低阈值，高量子效率，高速应变补偿多量子阱激光器
- 作者：Varga;D.;Kjebon;O.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
11.MOCVD growth and characterization of AlGaP/GaP/InGaP/GaP strained-layer single quantum wells

机译：AlGaP / GaP / InGaP / GaP应变层单量子阱的MOCVD生长和表征
- 作者：Rabiul Islam;M.;Neff;J.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
12.Aging behavior of InP substrates prepared with 2 different epi-ready processes

机译：通过2种不同的Epi-ready工艺制备的InP基板的老化行为
- 作者：Regreny;P.;Jacob;G.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
13.Optical transitions in strained quantum wells of In/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y/ with InGaAsP barriers

机译：具有InGaAsP势垒的In / sub x / Ga / sub 1-x / As / sub y / P / sub 1-y /的应变量子阱中的光学跃迁
- 作者：Jiang;X.P.;Thiagarajan;P.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
14.Reliability of InGaAs/InP semiconductor diode lasers

机译：InGaAs / InP半导体二极管激光器的可靠性
- 作者：Wilt D.P.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
15.Semi-insulating CCl/sub 4/-doped InP grown at low temperature by LP-MOCVD

机译：LP-MOCVD在低温下生长的半绝缘CCl / sub 4 /掺杂InP
- 作者：Gardner;N.F.;Hartmann;Q.J.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
16.Study of the defect evolution with Fe content in semi-insulating InP by photoinduced current transient spectroscopy

机译：用光感应电流瞬变光谱研究半绝缘InP中含Fe的缺陷演变
- 作者：Zerrai;A.;Marrakchi;G.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
17.W-band high power passivated 0.15 /spl mu/m InAlAs/InGaAs HEMT device

机译：W波段高功率钝化0.15 / spl mu / m InAlAs / InGaAs HEMT器件
- 作者：Hwang;K.C.;Ho;P.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
18.AlGaInP red laser diodes by OMVPE

机译：OMVPE的AlGaInP红色激光二极管
- 作者：Bour D.P.;Treat D.W.;Bringans R.D.;Geels R.S.;Welch D.F.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
19.An application of selective area MOVPE at atmospheric pressure to the realisation of a DBR laser

机译：大气压选择区MOVPE在DBR激光器实现中的应用
- 作者：Rose;B.;Delorme;F.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
20.Anisotropy control in the reactive ion etching of InP using oxygen in methane/hydrogen/argon

机译：甲烷/氢气/氩气中氧气的InP反应离子刻蚀中的各向异性控制
- 作者：Schramm;J.E.;Babic;D.I.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
21.Assessment of the strain of InP films on Si obtained by HVPE conformal growth

机译：HVPE共形生长获得的InP薄膜在Si上的应变评估
- 作者：Piffault;N.;Parillaud;O.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
22.Assessment of the structural parameters of GaInAs/GaInAsP strained layer multiquantum wells by X-ray diffraction

机译：X射线衍射评估GaInAs / GaInAsP应变层多量子阱的结构参数
- 作者：de Miguel;J.L.;Gomez-Salas;E.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
23.Band discontinuity reduction of i-GaInAsP/p-InP for improving 1.55 /spl mu/m GaInAsP/InP surface emitting laser performances

机译：降低i-GaInAsP / p-InP的谱带不连续性以提高1.55 / spl mu / m GaInAsP / InP表面发射激光器的性能
- 作者：Mori;K.;Miyamoto;T.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
24.Behavior of InP growth by gas source molecular beam epitaxy on singular and vicinal substrates

机译：气体源分子束外延在奇异衬底上产生InP的行为
- 作者：Yang;B.X.;Ozeki;T.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
25.Breakdown mechanisms in the on-state mode of operation of InAlAs/In/sub x/Ga/sub 1-x/As pseudomorphic HEMTs

机译：InAlAs / In / sub / x / Ga / sub 1-x / As拟态HEMT的导通状态工作模式下的击穿机制
- 作者：Dickmann;J.;Schildberg;S.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
26.Broadly tunable lasers with a super structure grating

机译：具有超结构光栅的可广泛调谐的激光器
- 作者：Tohmori Y.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
27.Bulk InP technologies: InP against GaAs

机译：批量InP技术：针对GaAs的InP
- 作者：Kohiro K.;Kainosho K.;Hirano R.;Uchida M.;Katsura S.;Kurita H.;Fukui T.;Oda O.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
28.Characterization of hetero interfaces in InP/In/sub 75/Ga/sub 25/As/InP HFETs by means of digital signal processing of measured low frequency noise spectra

机译：通过对测量的低频噪声频谱进行数字信号处理来表征InP / In / sub 75 / Ga / sub 25 / As / InP HFET中的异质接口
- 作者：Sommer;V.;Albert;P.-B.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
29.Characterization of plasma-induced traps in n-InP

机译：n-InP中等离子体诱导的陷阱的表征
- 作者：Sakamoto Y.;Ninomiya H.;Matsuda K.;Sugino T.;Shirafuji J.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
30.Close-spaced MOCVD reactor for 1-uniformity growth of In-containing materials on 4' substrates

机译：近距离MOCVD反应器，用于在4英寸基板上均匀生长1％的含In材料
- 作者：Vernon;S.M.;Colter;P.C.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
31.Co-integration of resonant-tunneling and single-barrier hot-electron transistors operating at 300 K

机译：工作于300 K的谐振隧道和单势垒热电子晶体管的协整
- 作者：Moise;T.S.;Kao;Y.-C.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
32.Comparison and optimisation of different ohmic contact metallisations for InP-HEMT structures with doped and undoped cap-layers

机译：掺杂和未掺杂盖层的InP-HEMT结构的不同欧姆接触金属化的比较和优化
- 作者：Klepser;B.-U.H.;Bergamaschi;C.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
33.Comparisons between conventional LEC, VCZ and VGF for the growth of InP crystals

机译：常规LEC，VCZ和VGF在InP晶体生长方面的比较
- 作者：Kawarabayashi;S.;Yokogawa;M.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
34.Conductance transient characterization of reactive ion etched HEMT gate recesses

机译：反应离子刻蚀的HEMT栅极凹槽的电导瞬态特性
- 作者：Schramm;J.E.;Mondry;M.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
35.Continuous-wave operation of sampled grating tunable lasers with 10 mwatt output power, <60 nm tuning, and monotonic tuning characteristics

机译：具有10兆瓦输出功率，<60 nm调谐和单调调谐特性的采样光栅可调激光器的连续波操作
- 作者：Jayaraman;V.;Heimbuch;M.E.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
36.Control of the interface roughness in highly strained In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As heterostructures

机译：高应变In / sub x / Ga / sub 1-x / As / In / sub 0.52 / Al / sub 0.48 / As异质结构中界面粗糙度的控制
- 作者：Garcia Perez;M.A.;Benyattou;T.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
37.Defect reductions and strain relaxation mechanisms in InP grown on patterned Si(001)

机译：在图案化Si（001）上生长的InP中的缺陷减少和应变松弛机制
- 作者：Schnabel;R.F.;Grundmann;L.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
38.Defect-free InP films on Si substrates obtained by hydride vapor phase conformal growth

机译：通过氢化物气相共形生长获得的Si衬底上的无缺陷InP膜
- 作者：Parillaud;O.;Piffault;N.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
39.Demonstration of GaInP/GaAs heterojunction bipolar transistors grown with reduced toxicity all-metalorganic precursors

机译：展示毒性降低的全金属有机前驱体生长的GaInP / GaAs异质结双极晶体管
- 作者：Ng;G.I.;Pavlidis;D.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
40.Demonstration of short range non-uniformities of the spectral parameters of photoluminescence bands in lattice mismatched InAlAs/InGaAs/InAlAs/InP heterostructures

机译：证明晶格失配的InAlAs / InGaAs / InAlAs / InP异质结构中光致发光带光谱参数的短距离非均匀性
- 作者：Klingelhofer;C.;Krawczyk;S.K.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
41.Determination of the noise source parameters in AlInAs/GaInAs HEMT heterostructures based on measured noise temperature dependence on the electric field

机译：根据测得的噪声温度对电场的依赖性确定AlInAs / GaInAs HEMT异质结构中的噪声源参数
- 作者：Bergamaschi;C.;Patrick;W.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
42.Development of advanced GaInAs/AlInAs /spl delta/-doped SQW-HEMT structures

机译：先进的GaInAs / AlInAs / spl delta /掺杂SQW-HEMT结构的开发
- 作者：Kunzel;H.;Bach;H.-G.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
43.Direct experimental evidence of indirect bandgap transitions in strained GaInAs(P)/InP quantum well structures

机译：GaInAs（P）/ InP量子阱结构中间接带隙跃迁的直接实验证据
- 作者：Harle;V.;Bolay;H.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
44.Dislocation-enhanced diffusion in heteroepitaxial GaInP/InP:S

机译：外延GaInP / InP：S中位错增强扩散
- 作者：Bensaada A.;Cochrane R.W.;Masut R.A.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
45.Drift region characteristics of InP-based HEMT devices evaluated by a simple drift region model

机译：通过简单的漂移区模型评估基于InP的HEMT器件的漂移区特性
- 作者：Strahle;S.;Geiger;D.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
46.Effect of barrier width on the performance of compressively strained InGaAs/InGaAsP MQW lasers

机译：势垒宽度对压缩应变InGaAs / InGaAsP MQW激光器性能的影响
- 作者：Binsma;J.J.M.;Thijs;P.J.A.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
47.Effect of indium mole fraction on charge control, DC and RF performance of single quantum-well InP/In/sub x/Ga/sub 1-x/As/InP (0.53/spl les/x/spl les/0.81) HEMTs

机译：铟摩尔分数对单量子阱InP / In / sub x / Ga / sub 1-x / As / InP（0.53 / spl les / x / spl les / 0.81）HEMT的电荷控制，DC和RF性能的影响
- 作者：Mesquida Kusters;A.;Kohl;A.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
48.Effective first layer antireflective coating on InP solar cells grown by chemical oxidation

机译：化学氧化生长的InP太阳能电池上有效的第一层抗反射涂层
- 作者：Faur;M.;Faur;M.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
49.Effects of wet and dry etching and sulphide passivation on surface recombination velocities of InGaP p-n junctions

机译：湿法和干法蚀刻以及硫化物钝化对InGaP p-n结表面复合速度的影响
- 作者：Pearton;S.J.;Ren;F.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
50.Eight-channel p-i-n/HBT monolithic receiver array at 2.5 Gb/s per channel for WDM applications

机译：用于WDM应用的八通道p-i-n / HBT单片接收器阵列，每通道2.5 Gb / s
- 作者：Chandrasekhar;S.;Lunardi;L.M.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
51.Electrolyte for EC-V profiling of InP and GaAs based heterostructures

机译：用于基于InP和GaAs的异质结构EC-V谱分析的电解质
- 作者：Faur;M.;Faur;M.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
52.Gain coupled AlGaInAs/GaInAs DFB-lasers utilizing gratings by masked implantation enhanced intermixing

机译：利用掩膜注入增强光栅混合，获得耦合的AlGaInAs / GaInAs DFB激光器
- 作者：Hase;A.;Kaden;C.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
53.Gratings for distributed feedback lasers formed by selective epitaxial growth

机译：通过选择性外延生长形成的分布式反馈激光器的光栅
- 作者：Albrektsen;O.;Salzman;J.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
54.Growth and characterisation of high quality GaInP/AlGaInP quantum wells by solid-source molecular beam epitaxy

机译：固体源分子束外延生长和表征高质量GaInP / AlGaInP量子阱
- 作者：Hopkinson;M.;David;J.P.R.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
55.Growth mechanism on patterned surfaces and applications using metalorganic growth technologies

机译：图案化表面上的生长机理及其使用金属有机生长技术的应用
- 作者：Heinecke;H.;Veuhoff;E.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
56.Growth of >100< InP single crystals by the liquid encapsulated vertical Bridgman method using a flat-bottom crucible

机译：使用平底坩埚通过液体封装的垂直Bridgman方法生长> 100
- 作者：Matsumoto;F.;Okano;Y.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
57.Growth of chromium doped semi-insulating InP by MOVPE

机译：MOVPE法生长掺杂铬的半绝缘InP
- 作者：Harlow M.J.;Duncan W.J.;Lealman I.F.;Spurdens P.C.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
58.Growth of InP on patterned substrates using AP-MOVPE

机译：使用AP-MOVPE在图案化基板上生长InP
- 作者：Lee B.-T.;Logan R.A.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
59.High bandwidth InAlAs/InGaAs PIN-HBT monolithically integrated photoreceiver

机译：高带宽InAlAs / InGaAs PIN-HBT单片集成光接收器
- 作者：Gutierrez-Aitken;A.L.;Cowles;J.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
60.High performance InGaAsP channel HFETs on InP for OEIC applications

机译：适用于OEIC应用的InP上的高性能InGaAsP沟道HFET
- 作者：Berthier P.;Legros E.;Giraudet L.;Scavennec A.;Dumas J.M.;Rigaud D.;Valenza M.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
61.High performance monolithically integrated InP photoreceivers

机译：高性能单片集成InP光接收器
- 作者：Blaser M.;Melchior H.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
62.High quality strained GaInAsP/GaInAsP quantum well laser structures grown by metal organic vapor phase epitaxy

机译：金属有机气相外延生长的高质量应变GaInAsP / GaInAsP量子阱激光结构
- 作者：Streubel;K.;Wallin;J.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
63.High resistive undoped Al/sub 0.48/In/sub 0.52/As layers grown by MOCVD

机译：通过MOCVD生长的高电阻无掺杂Al / sub 0.48 / In / sub 0.52 / As层
- 作者：Ochi;S.;Kimura;T.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
64.High speed InGaP emitter HBTs fabricated with ECR dry etch technique

机译：采用ECR干蚀刻技术制造的高速InGaP发射极HBT
- 作者：Yang;L.W.;Brozovich;R.S.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
65.High-efficiency p In/sub 0.53/Ga/sub 0.47/As solar cell for tandem applications

机译：串联应用的高效p / n In / sub 0.53 / Ga / sub 0.47 / As太阳能电池
- 作者：Bensaoula;A.;Medelci;N.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
66.High-performance InP-based HEMT's with a graded pseudomorphic channel

机译：高性能的基于InP的HEMT，带有分级伪通道
- 作者：Chough;K.B.;Hong;B.W.-P.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
67.Hydrogen purging during growth interruptions and its effect on electron transport in InP/InGaAs/InP HFETS grown by LP-MOVPE

机译：LP-MOVPE生长的InP / InGaAs / InP HFET中生长中断期间的氢吹扫及其对电子传输的影响
- 作者：Kohl;A.;Mesquida Kusters;A.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
68.Implant isolation and dry etching of InN

机译：InN的植入物隔离和干法蚀刻
- 作者：Abernathy C.R.;Ren F.;Pearton S.J.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
69.Improved barrier height of Schottky junctions formed on phosphidized AlInAs

机译：改善磷化AlInAs上形成的肖特基结的势垒高度
- 作者：Sugino;T.;Yamamura;I.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
70.Improved compression of InGaAsP gain-switched DFB laser pulses using polarization dispersion effects

机译：利用偏振色散效应改善InGaAsP增益切换DFB激光脉冲的压缩
- 作者：Thedrez;B.;Takeshita;H.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
71.Improvement of InAlAs/InP heterointerface grown by MOVPE by using thin AlP layer

机译：使用薄AlP层改进MOVPE生长的InAlAs / InP异质界面
- 作者：Imanishi;K.;Kasai;K.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
72.In situ mass spectrometric diagnostics during InP deposition in a remote plasma-enhanced MOCVD system

机译：在远程等离子体增强型MOCVD系统中InP沉积过程中的原位质谱诊断
- 作者：Bruno;G.;Losurdo;M.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
73.In/sub 0.5/Ga/sub 0.5/P spacer layer for high drain breakdown voltage InGaAs/InAlAs HFET on InP grown by MOVPE

机译：In / sub 0.5 / Ga / sub 0.5 / P隔离层，用于通过MOVPE生长的InP上的高漏极击穿电压InGaAs / InAlAs HFET
- 作者：Scheffer;F.;Lindner;A.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
74.InAlAs/InGaAs HFET with extremely high device breakdown using an optimized buffer layer structure

机译：InAlAs / InGaAs HFET使用优化的缓冲层结构实现极高的器件击穿
- 作者：Auer;U.;Reuter;R.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
75.InAlAs/InGaAs MSM PDs heteroepitaxially grown on Si

机译：在硅上异质外延生长的InAlAs / InGaAs MSM PD
- 作者：Sasaki T.;Enoki T.;Tachikawa M.;Sugo M.;Mori H.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
76.InAlAs/InGaAs varactor diodes with THz cutoff frequencies fabricated by planar integrated technology

机译：通过平面集成技术制造的具有THz截止频率的InAlAs / InGaAs变容二极管
- 作者：Marsh;P.;Ng;G.I.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
77.Influences of external parameters on low pressure MOVPE growth results of InP based materials

机译：外部参数对InP基材料低压MOVPE生长结果的影响
- 作者：Beccard;B.;Michel;W.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
78.InGaAs/InP and InAsP/InP quantum wells on GaAs (100) with graded In/sub x/Ga/sub 1-x/As or In/sub 1-y/Ga/sub y/P buffer layers grown by gas-source molecular beam epitaxy

机译：GaAs（100）上的InGaAs / InP和InAsP / InP量子阱，具有通过气源生长的In / sub x / Ga / sub 1-x / As或In / sub 1-y / Ga / sub y / P缓冲层分子束外延
- 作者：Tu;C.W.;Chin;T.P.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
79.InP based carbon-doped base HBT technology: its recent advances and circuit applications

机译：基于InP的碳掺杂基本HBT技术：其最新进展和电路应用
- 作者：Song;J.-I.;Hong;B.W.-P.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
80.InP double heterostructure bipolar transistors: comparison of doped and undoped InGaAsP composite collectors

机译：InP双异质结构双极晶体管：掺杂和未掺杂InGaAsP复合集电极的比较
- 作者：McKinnon;W.R.;McAlister;S.P.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
81.InP islands on GaAs substrates: MOCVD growth of quantum-sized structures

机译：GaAs衬底上的InP岛：量子尺寸结构的MOCVD生长
- 作者：Reaves;C.M.;Bressler-Hill;V.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
82.InP/InGaAs heterojunction bipolar transistors with regrown emitters

机译：具有再生长发射极的InP / InGaAs异质结双极晶体管
- 作者：Matsuda H.;Tanoue T.;Kashima H.;Mozume T.;Nakamura T.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
83.InP-based HEMTs with AlIn/sub 1-x/P Schottky barrier layers grown by gas-source MBE

机译：气源MBE生长的具有InIn 1-sub / x肖特基势垒层的InP基HEMT
- 作者：Brown;J.J.;Matloubian;M.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
84.InP-based HEMTs: status and potential

机译：基于InP的HEMT：现状和潜力
- 作者：Mishra U.K.;Shealy J.B.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
85.Integrated laser-waveguide structures using selective area intermixing

机译：使用选择性区域混合的集成激光波导结构
- 作者：Emery;J.-Y.;Starck;C.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
86.Integrated quantum well modulators for very high speed transmission systems

机译：用于超高速传输系统的集成量子阱调制器
- 作者：Zielinski;E.;Baums;D.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
87.Integration of tunable DBR-lasers with waveguides for heterodyne receiver OEIC applications using selective area MOVPE

机译：使用选择区域MOVPE将外差式接收器OEIC应用中的可调DBR激光器与波导集成
- 作者：Kaiser;R.;Fidorra;F.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
88.Interface analysis for cryogenic processed metal/InP

机译：低温加工金属/ InP的界面分析
- 作者：He L.;Shi Z.Q.;Anderson W.A.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
89.I-V kink in InAlAs/InGaAs MODFETs due to weak impact ionization process in the InGaAs channel

机译：由于InGaAs通道中的弱电离过程，InAlAs / InGaAs MODFET中的I-V扭结
- 作者：Guo-Gang Zhou;Fischer-Colbrie;A.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
90.Lateral confinement effects on the Landau level dispersion in In/sub 0.53/Ga/sub 0.47/As/InP quantum wires

机译：横向限制对In / sub 0.53 / Ga / sub 0.47 / As / InP量子线中Landau能级色散的影响
- 作者：Hammersberg;J.;Weman;H.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
91.Long wavelength metal-semiconductor-metal photodetectors with Ti/Au and indium-tin-oxide electrodes

机译：具有Ti / Au和铟锡氧化物电极的长波长金属半导体金属光电探测器
- 作者：Adesida;I.;Seo;J.W.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
92.Low frequency noise and microwave properties of InP/InGaAs heterojunction bipolar transistors

机译：InP / InGaAs异质结双极晶体管的低频噪声和微波特性
- 作者：Martin;S.;Smith;P.R.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
93.Low frequency noise sources in InAlAs/InGaAs MODFET's

机译：InAlAs / InGaAs MODFET中的低频噪声源
- 作者：Rojo-Romeo P.;Viktorovitch P.;Leclercq J.L.;Letartre X.;Tardy J.;Oustric M.;Gendry M.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
94.Low loss corner mirrors in InP/InGaAsP/InP for integrated optics etched with chlorinated gases

机译：InP / InGaAsP / InP中的低损耗角镜，用于用氯化气体蚀刻的集成光学元件
- 作者：Schneider;J.;Moser;M.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
95.Low-temperature Pd direct bonding and electrical transport across InP-Pd-GaAs interfaces

机译：InP-Pd-GaAs界面上的低温Pd直接键合和电传输
- 作者：I-Hsing Tan;Reaves;C.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
96.MOCVD grown Si-doped n/sup +/ InP layers for the subcollector region in HBTs

机译：用于HBT中子收集区的MOCVD生长的Si掺杂n / sup + / InP层
- 作者：Clawson;A.R.;Hanson;C.M.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
97.MOCVD growth parameter study of InP-based materials for high-performance HEMTs

机译：高性能HEMT InP基材料的MOCVD生长参数研究
- 作者：Kyushik Hong;Pavlidis;D.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
98.MOMBE growth of InGaP with tertiarybutylphosphine (TBP) and its application to the carbon-doped base InGaP/GaAs HBTs

机译：InGaP与叔丁基膦（TBP）的MOMBE生长及其在碳掺杂InGaP / GaAs HBT中的应用
- 作者：Shirakashi;J.-I.;Azuma;T.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
99.Monitoring and control of fabrication processes for integrated optics devices

机译：监视和控制集成光学器件的制造过程
- 作者：Ojha;S.M.;Turner;R.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年
100.Monolayer control of chemical beam etching for regrowth

机译：化学束蚀刻的再生单层控制
- 作者：Chiu T.H.;Tsang W.T.;Kapre R.M.;Williams M.D.;Ferguson J.F.
- 会议名称：《Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on》 | 1994年