A monolithic 75-110 GHz balanced InP-based HEMT amplifier

摘要

A monolithic microwave integrated circuit (MMIC) balanced amplifier covering the entire W-band (75-110 GHz) has been developed using 0.1-mm pseudomorphic InAlAs-InGaAs-InP HEMT technology. This MMIC amplifier demonstrated first pass success with a measured gain of 23+or-3 dB and good return loss from 75 to 110 GHz. The noise figure of this amplifier is about 6 dB around 94 GHz. This is believed to be the best reported broadband and high-gain performance of monolithic amplifiers covering the entire W-band.