A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

著录项

• 来源
  《中国物理：英文版》 |2016年第5期|448-452|共5页
• 作者

  Ou-Peng Li; Yong Zhang; Rui-Min Xu; Wei Cheng; Yuan Wang; Bing Niu; Hai-Yan Lu;

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• 作者单位

  Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China, Chengdu 611731, China;

  Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China, Chengdu 611731, China;

  Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China, Chengdu 611731, China;

  Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China;

  Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China;

  Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China;

  Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China;

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• 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词