Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

摘要

We report on the CMOS integration of vertically stacked gate-all-around (GAA) silicon nanowire MOSFETs, with matched threshold voltages (Vt, sat ~ 0.35 V) for N- and P-type devices. The Vt setting is enabled by nanowire-compatible dual-work-function metal integration in a high-k last replacement metal gate process. Furthermore, we demonstrate that N- and P-type junction formation can influence nanowire release differently due to both implantation-induced SiGe/Si intermixing and doping effects. These findings underline that junction formation and nanowire release require co-optimization in GAA CMOS technologies.