Vertically Stacked Gate-All-Around Si Nanowire CMOS Transistors with Dual Work Function Metal Gates

摘要

We report on the CMOS integration of vertically stacked gate-all-around (GAA) silicon nanowire MOSFETs, with matched threshold voltages (V_(T,SAT) ~ 0.35V) for N- and P-type devices. The V_T setting is enabled by nanowire-compati-ble dual-work-function metal integration in a high-k last replacement metal gate process. Furthermore, we demonstrate that N- and P-type junction formation can influence nanowire release differently due to both implantation-induced SiGe/Si intermixing and doping effects. These findings underline that junction formation and nanowire release require co-optimization in GAA CMOS technologies.