Semiconductor structure, CMOS device of dual work function, double CMOS circuit of the work function, and a method of forming a CMOS device of dual work function on the substrate (carbide metal gate structure and forming method)

摘要

Topic The complementary metal oxide semiconductor which at least includes one which includes the gate electrode which includes the carbonized metal FET (CMOS) and the like are the semiconductor device and the times when formation method is offered.Solutions As for this CMOS, it can give double work function a certain metal with the carbide of a certain metal, the metal gate electrode of double work function is included. Selective figure Figure 5