Impact of fin shape variability on device performance towards 10nm node

摘要

A transition from planar to FinFET brings additional variability sources from 3D channel structure. In this study, the impact of fin shape variability on device performance, especially from the view point of short channel effect control, is investigated with using Si-validated TCAD. This reveals that the width, height and taper angle of fin have significant impact on the electrostatics of the device. In addition, through the statistical Monte-Carlo simulations with compact model, the impact of fin shape variability is visualized in comparison with conventional device variability sources, i.e., gate length, work function, and equivalent oxide thickness. As a result, fin width and fin angle are found to be major variability source in addition to gate length. This indicates that the suppression of the process variability in fin width and fin angle is key to control device variability, especially in advanced node.