The integration of various new optical and high voltage devices into an existing trench isolated 650 V BCD process on thick SOI wafers with a minimum of additional processing effort is reported. The trench isolation together with the thickness of the SOI wafer allows the construction of isolated photodiodes with excellent response even for red and infrared wavelengths. Furthermore the thick SOI material enables the integration of vertical high voltage devices like NPN bipolar transistors. Together with a special collector design the SOI topology allows the integration of IGBT devices which can be tuned by design measures only between on-state and switching performance.
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机译：据报道，各种新的光学和高压器件以最小的额外处理工作量就可以在厚的SOI晶圆上集成到现有的沟槽隔离650 V BCD工艺中。沟槽隔离以及SOI晶片的厚度允许构建隔离的光电二极管，即使对于红色和红外线波长也具有出色的响应。此外，厚的SOI材料可以集成垂直高压器件，例如NPN双极晶体管。结合特殊的集电极设计，SOI拓扑结构允许集成IGBT器件，而这些器件只能通过设计措施在导通状态和开关性能之间进行调整。
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