Monolithically integrated circuits having dielectrically isolated, electrically controlled optical devices and process for fabricating the same

摘要

A fabrication technique for improved dielectric isolation of adjacent, electronic devices or electrically controllable optical devices provides an inter-device resistance in excess of 1 M. Strips of a silicon oxide material, such as SiO.sub.2, are formed between the devices after device formation but prior to regrowth of an electrically conductive cap layer and subsequent metallization. The presence of the SiO.sub.2 strips prevents regrowth of the cap layer between the adjacent devices.