首页>
外国专利>
MONOLITHICALLY INTEGRATED CIRCUITS HAVING DIELECTRICALLY ISOLATED, ELECTRICALLY CONTROLLED OPTICAL DEVICES AND PROCESS FOR FABRICATING THE SAME
MONOLITHICALLY INTEGRATED CIRCUITS HAVING DIELECTRICALLY ISOLATED, ELECTRICALLY CONTROLLED OPTICAL DEVICES AND PROCESS FOR FABRICATING THE SAME
展开▼
机译:具有电隔离的,电控的光学器件的单积分集成电路,以及制造该电路的过程
展开▼
页面导航
摘要
著录项
相似文献
摘要
A fabrication technique for improved dielectric isolation of adjacent, electronic devices or electrically controllable optical devices provides an inter-device resistance in excess of 1 M.OMEGA.. Strips of a silicon oxide material, such as SiO2, are formed between the devices after device formation but prior to regrowth of an electrically conductive cap layer and subsequent metallization. The presence of the SiO2 strips prevents regrowth of the cap layer between the adjacent devices.
展开▼