The integration of various new optical and high voltage devices into an existing trench isolated 650 V BCD process on thick SOI wafers with a minimum of additional processing effort is reported. The trench isolation together with the thickness of the SOI wafer allows the construction of isolated photodiodes with excellent response even for red and infrared wavelengths. Furthermore the thick SOI material enables the integration of vertical high voltage devices like NPN bipolar transistors. Together with a special collector design the SOI topology allows the integration of IGBT devices which can be tuned by design measures only between on-state and switching performance.
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