Degradation of AlGaN/GaN High Electron Mobility Transistors from X-Band Operation

摘要

AlGaN/GaN HEMTs with a gate length of 0.125 µm were stressed at Class AB condition, 10 GHz under 3 dB compression for up to 350 hours. Devices exhibited excellent RF stability up to a drain bias of 20 V. Rapid degradation was observed for a drain bias of 25 V. Substantial Schottky contact degradation was observed for all three bias conditions. Electroluminescence indicates localized points of failure along the channel length, and micro- photoluminescence indicates an increase in non- radiative trap formation in regions of failure.