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2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011

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1.CSICS 2011 Copyright Page

机译：CSICS 2011版权页
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
2.CSICS 2011 Message from the Chair

机译：CSICS 2011主席致辞
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
3.Front-Ends for Hybrid Beamforming AESA's

机译：混合波束成形AESA的前端
- 作者：van Vliet F. E.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
4.Advanced Millimeter-Wave Multifunction Systems and the Implications for Semiconductor Technology

机译：先进的毫米波多功能系统及其对半导体技术的影响
- 作者：Wallace H. Bruce
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
5.Automotive Applications of GaN Power Devices

机译：GaN功率器件的汽车应用
- 作者：Kachi Tetsu;Kanechika Masakazu;Uesugi Tsutomu
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
6.A 95 Efficient Normally-Off GaN-on-Si HEMT Hybrid-IC Boost-Converter with 425-W Output Power at 1 MHz

机译：效率为95％的常关型硅上GaN HEMT混合IC升压转换器，在1 MHz时具有425W的输出功率
- 作者：Hughes Brian;Yoon Yeong Y.;Zehnder Daniel M.;Boutros Karim S.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
7.A Phased Array RFIC with Built-In Self-Test Using an Integrated Vector Signal Analyzer

机译：使用集成矢量信号分析仪进行内置自测的相控阵RFIC
- 作者：Inac Ozgur;Shin Donghyup;Rebeiz Gabriel M.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
8.A 600-W C-Band Amplifier Using Spatially Combined GaAs FETs

机译：使用空间组合式GaAs FET的600W C波段放大器
- 作者：Than H. T.;Sun G. W.;Cuellar G. S.;Zeng J.;Schultz N. T.;Moya M. E.;Chung Y.;Deckman B. C.;DeLisio M. P.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
9.High Efficiency Ka-Band Power Amplifier MMIC Utilizing a High Voltage Dual Field Plate GaAs PHEMT Process

机译：利用高压双场板GaAs PHEMT工艺的高效Ka波段功率放大器MMIC
- 作者：Campbell Charles F.;Dumka Deep C.;Kao Ming-Yih;Fanning David M.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
10.A CMOS Low-Power 10:4 MUX and 4:10 DEMUX Gearbox IC for 100-Gigabit Ethernet Link

机译：用于100千兆位以太网链路的CMOS低功耗10：4 MUX和4:10 DEMUX变速箱IC
- 作者：Fukuda Koji;Ono Goichi;Watanabe Keiki;Muto Takashi;Yamashita Hiroki;Masuda Noboru;Nemoto Ryo;Suzuki Eiichi;Takemoto Takashi;Yuki Fumio;Yagyu Masayoshi;Toyoda Hidehiro;Kono Masashi;Kambe Akihiro;Umai Seiichi;Saito Tatsuya;Nishimura Shinji
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
11.A 25 GHz Analog Multiplexer for a 50GS/s D/A-Conversion System in InP DHBT Technology

机译：采用InP DHBT技术的用于50GS / s D / A转换系统的25 GHz模拟多路复用器
- 作者：Ferenci Damir;Grozing Markus;Berroth Manfred
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
12.A 6 Vpp, 52 dB, 30-dB Dynamic Range, 43 Gb/s InP DHBT Differential Limiting Amplifier

机译：一个6 Vpp，52 dB，30 dB动态范围，43 Gb / s InP DHBT差分限制放大器
- 作者：Dupuy J.-Y.;Konczykowska A.;Jorge F.;Riet M.;Berdaguer P.;Godin J.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
13.High Performance Mixed Signal and RF Circuits Enabled by the Direct Monolithic Heterogeneous Integration of GaN HEMTs and Si CMOS on a Silicon Substrate

机译：GaN HEMT和Si CMOS在硅衬底上直接单片异构集成实现了高性能混合信号和RF电路
- 作者：Kazior T. E.;Chelakara R.;Hoke W.;Bettencourt J.;Palacios T.;Lee H. S.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
14.A Robust AlGaN/GaN HEMT Technology for RF Switching Applications

机译：稳健的AlGaN / GaN HEMT技术，用于射频开关应用
- 作者：Hodge Michael D.;Vetury Ramakrishna;Shealy Jeffrey;Adams Ryan
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
15.A 2.5-dB Insertion Loss, DC-60 GHz CMOS SPDT Switch in 45-nm SOI

机译：在45nm SOI中具有2.5dB插入损耗的DC-60 GHz CMOS SPDT开关
- 作者：Parlak Mehmet;Buckwalter James F.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
16.A 57-66 GHz Vector Sum Phase Shifter with Low Phase/Amplitude Error Using a Wilkinson Power Divider with LHTL/RHTL Elements

机译：使用具有LHTL / RHTL元件的Wilkinson功率分配器，具有低相位/幅度误差的57-66 GHz矢量和移相器
- 作者：Peng Pen-Jui;Kao Jui-Chih;Wang Huei
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
17.A Q-Band Amplifier Implemented with Stacked 45-nm CMOS FETs

机译：采用堆叠式45 nm CMOS FET实现的Q波段放大器
- 作者：Pornpromlikit Sataporn;Dabag Hayg-Taniel;Hanafi Bassel;Kim Joohwa;Larson Lawrence E.;Buckwalter James F.;Asbeck Peter M.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
18.A Novel Clamp Based ESD Protection Structure for High Power RF Ports in GaAs pHEMT Process

机译：GaAs pHEMT工艺中基于钳位的新型ESD保护结构，用于大功率射频端口
- 作者：Muthukrishnan Swaminathan;Hale Cody;Peachey Nathaniel
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
19.A 42 GHz Amplifier Designed Using Common-Gate Load Pull

机译：使用共门负载牵引设计的42 GHz放大器
- 作者：Mahon Simon J.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
20.A W-Band x12 Frequency Multiplier MMIC in Waveguide Package Using Quartz and Ceramic Transitions

机译：采用石英和陶瓷过渡的W波段x12倍频器MMIC封装在波导中
- 作者：Weber R.;Tessmann A.;Zink M.;Kuri M.;Kallfass I.;Stulz H.-P.;Riessle M.;Massler H.;Maier T.;Leuther A.;Schlechtweg M.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
21.A 53 GHz Single Chip Receiver for Geostationary Atmospheric Measurements

机译：用于对地静止大气测量的53 GHz单芯片接收器
- 作者：Gavell Marcus;Ferndahl Mattias;Gunnarsson Sten E.;Zirath Herbert
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
22.A 60-GS/s 6-Bit DAC in 0.5-im InP HBT Technology for Optical Communications Systems

机译：采用0.5im InP HBT技术的60-GS / s 6位DAC，用于光通信系统
- 作者：Nagatani Munehiko;Nosaka Hideyuki;Sano Kimikazu;Murata Koichi;Kurishima Kenji;Ida Minoru
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
23.A Decade Bandwidth 90 W GaN HEMT Push-Pull Power Amplifier for VHF / UHF Applications

机译：用于VHF / UHF应用的十年带宽90 W GaN HEMT推挽功率放大器
- 作者：Krishnamurthy K.;Martin J.;Aichele D.;Runton D.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
24.A 122 GHz Multiprobe Reflectometer for Dielectric Sensor Readout in SiGe BiCMOS Technology

机译：用于SiGe BiCMOS技术的介电传感器读数的122 GHz多探头反射仪
- 作者：Laemmle Benjamin;Schmalz Klaus;Scheytt Christoph;Kissinger Dietmar;Weigel Robert
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
25.A MMIC Frequency Doubler Using AlGaN/GaN HEMT Technology

机译：使用AlGaN / GaN HEMT技术的MMIC倍频器
- 作者：Zomorrodian Valiallah;York Robert A.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
26.A 75 mW 210 GHz Power Amplifier Module

机译：75 mW 210 GHz功率放大器模块
- 作者：Radisic Vesna;Leong Kevin M. K. H.;Sarkozy Stephen;Mei Xiaobing;Yoshida Wayne;Liu Po-Hsin;Lai Richard
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
27.A 220-225.9 GHz InP HBT Single-Chip PLL

机译：220-225.9 GHz InP HBT单芯片PLL
- 作者：Seo Munkyo;Young Adam;Urteaga Miguel;Griffith Zach;Rodwell Mark;Choe Myung-Jun;Field Mark
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
28.Challenges and Requirements of Multimode Multiband Power Amplifiers for Mobile Applications

机译：移动应用中多模多频带功率放大器的挑战和要求
- 作者：Cheng Nick;Young James P.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
29.InP DHBT Very High Speed Power-DACs for Spectrally Efficient Optical Transmission Systems

机译：用于光谱高效光传输系统的InP DHBT超高速功率DAC
- 作者：Godin J.;Konczykowska A.;Dupuy J.-Y.;Jorge F.;Gnauck A.;Riet M.;Moulu J.;Nodjiadjim V.;Berdaguer P.;Blache F.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
30.DC - 10GHz RF Digital to Analog Converter

机译：DC-10GHz射频数模转换器
- 作者：Choe Myung-Jun;Lee Kang-Jin;Seo Munkyo;Teshome Mesfin
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
31.Pervasive Modeling in InP HBT Technology Development

机译：InP HBT技术开发中的普遍建模
- 作者：Li James Chingwei;Hussain Tahir;Hitko Donald A.;Sokolich Marko
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
32.Insulated-Gate Integrated III-Nitride RF Switches

机译：绝缘门集成式III氮化物射频开关
- 作者：Gaska R.;Yang J.;Billingsley D.;Khan B.;Simin G.;Wong H. Y.;Braga N.;Hu X.;Deng J.;Shur M.;Mickevicius R.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
33.Near-Junction Thermal Management for Wide Bandgap Devices

机译：宽带隙器件的近结热管理
- 作者：Bar-Cohen Avram;Albrecht John D.;Maurer Joseph J.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
34.Applications of SOI Technologies to Communication

机译：SOI技术在通信中的应用
- 作者：Plouchart Jean-Olivier
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
35.Extraction of Dynamic On-Resistance in GaN Transistors: Under Soft- and Hard-Switching Conditions

机译：GaN晶体管中动态导通电阻的提取：在软开关和硬开关条件下
- 作者：Lu Bin;Palacios Tomas;Risbud Dilip;Bahl Sandeep;Anderson David I.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
36.48.8 mW Multi-Cell InP HBT Amplifier with On-Wafer Power Combining at 220 GHz

机译：48.8 mW多单元InP HBT放大器，具有220 GHz的片上功率组合
- 作者：Reed Thomas B.;Rodwell Mark J. W.;Griffith Zach;Rowell Petra;Urteaga Miguel;Field Mark;Hacker Jon
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
37.MMIC Cavity Oscillators

机译：MMIC腔振荡器
- 作者：Khalil Ahmed;Oran Ekrem;Hay Christopher;Koechlin Michael
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
38.Liquid Metal Vertical Interconnects for Flip-Chip Assembly of GaAs C-Band Power Amplifiers onto Micro-Rectangular Coaxial Transmission Lines

机译：液态金属垂直互连，用于将GaAs C波段功率放大器倒装芯片组装到微矩形同轴传输线上
- 作者：Ralston Parrish;Oliver Marcus;Vummidi Krishna;Raman Sanjay
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
39.SiGeC and InP HBT Compact Modeling for mm-Wave and THz Applications

机译：适用于毫米波和太赫兹应用的SiGeC和InP HBT紧凑模型
- 作者：Schroter M.;Pawlak A.;Sakalas P.;Krause J.;Nardmann T.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
40.Novel HEMT Models with Improved Higher-Order Derivatives and Extracting Their Parameters Using Multibias S-Parameters

机译：具有改进的高阶导数的新型HEMT模型，并使用多偏置S参数提取其参数
- 作者：Dobes Josef;Grabner Martin
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
41.Ultra-High-Speed Transmitter and Receiver ICs for 100 Gbit/s Ethernet Using InP DHBTs

机译：使用InP DHBT的100 Gbit / s以太网超高速发送器和接收器IC
- 作者：Makon R. E.;Driad R.;Rosenzweig J.;Hurm V.;Schubert C.;Walcher H.;Schlechtweg M.;Ambacher O.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
42.An 8-Watt 250-3000 MHz Low Noise GaN MMIC Feedback Amplifier with > +50 dBm OIP3

机译：具有超过+50 dBm OIP3的8瓦250-3000 MHz低噪声GaN MMIC反馈放大器
- 作者：Kobayashi Kevin W.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
43.Identification of Pre-Catastrophic Failure Mechanisms in High Power GaN HEMT

机译：大功率GaN HEMT中灾难性破坏机理的识别。
- 作者：Huebschman Benjamin D.;Crowne Frank;Darwish Ali M.;Viveiros Edward A.;Kingkeo Khamsouk;Goldsman Neil
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
44.Millimeter-Wave and THz Circuits in 45-nm SOI CMOS

机译：45nm SOI CMOS中的毫米波和太赫兹电路
- 作者：Inac Ozgur;Cetinoneri Berke;Uzunkol Mehmet;Atesal Yusuf A.;Rebeiz Gabriel M.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
45.III-V Quantum Well Field Effect Transistors on Silicon for Future High Performance and Low Power Logic Applications

机译：硅上的III-V量子阱场效应晶体管，用于未来的高性能和低功耗逻辑应用
- 作者：Dewey G.;Radosavljevic M.;Mukherjee N.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
46.325W HVHBT Doherty Final and LDMOS Doherty Driver with 30dB Gain and 54 PAE Linearized to -55dBc for 2c11 6.5dB PAR

机译：具有30dB增益和54％PAE的325W HVHBT Doherty Final和LDMOS Doherty驱动器对于2c11 6.5dB PAR线性化至-55dBc
- 作者：Page Preston;Steinbeiser Craig;Landon Thomas;Burgin Gary;Hajji Rached;Branson Roger;Krutko Oleh;Delaney Joe;Witkowski Larry
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
47.Waveform Engineering beyond the Safe Operating Region: Fully Active Harmonic Load Pull Measurements under Pulsed Conditions

机译：超出安全工作区域的波形工程：脉冲条件下的完全有源谐波负载牵引测量
- 作者：Casbon M. A.;Tasker P. J.;Benedikt J.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
48.0.15uM Y-Gate pHEMT Process Using Deep-UV Phase-Shift Lithography

机译：采用深紫外相移光刻技术的0.15uM Y门pHEMT工艺
- 作者：Wang Jerry G.;Stanback John;Fujii Kohei
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
49.100-Gbit/s PDM-QPSK Integrated Coherent Receiver Front-End for Optical Communications

机译：用于光通信的100 Gb / s PDM-QPSK集成相干接收机前端
- 作者：Murata Koichi;Saida Takashi;Ogawa Ikuo;Kasahara Ryoichi;Muramoto Yoshifumi;Fukuyama Hiroyuki;Sano Kimikazu;Nosaka Hideyuki;Kawakami Hiroto
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
50.Development of InAlN/GaN HEMTs Power Devices in S-Band

机译：S波段InAlN / GaN HEMT功率器件的开发
- 作者：Piotrowicz S.;Chartier E.;Jardel O.;Dufraisse J.;Callet G.;Jacquet J.-C.;Lancereau D.;Morvan E.;Aubry R.;Sarazin N.;Dua C.;Oualli M.;Di-Forte Poisson M. A.;Delage S. L.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
51.Degradation of AlGaN/GaN High Electron Mobility Transistors from X-Band Operation

机译：X波段操作会降解AlGaN / GaN高电子迁移率晶体管
- 作者：Douglas E. A.;Pearton S. J.;Poling B.;Ren F.;Heller E.;Via D.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
52.The Power Electronics Market and the Status of GaN Based Power Devices

机译：电力电子市场及GaN基功率器件的现状
- 作者：Briere Michael A.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
53.Realization of Logic Operations Through Optimized Ballistic Deflection Transistors

机译：通过优化的弹道偏转晶体管实现逻辑运算
- 作者：Kaushal V.;Margala M.;Iniguez-de-la-Torre I.;Gonzalez T.;Mateos J.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
54.History and Evolution of Millimetre-Wave MMICs for Point-to-Point Radio

机译：点对点无线电毫米波MMIC的历史和演进
- 作者：Harvey James T.;Mahon Simon J.;Montgomery III William F.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
55.High-Order Multi-Level Optical Transmission for beyond 100 Gb/s Using High-Speed DACs

机译：使用高速DAC进行超过100 Gb / s的高阶多级光传输
- 作者：Yamanaka Shogo;Kobayashi Takayuki;Nagatani Munehiko
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
56.Wideband 1 to 6 GHz Ten and Twenty Watt Balanced GaN HEMT Power Amplifier MMICs

机译：宽带1至6 GHz十瓦和二十瓦平衡GaN HEMT功率放大器MMIC
- 作者：Komiak James J.;Lender Robert J.;Chu Kanin;Chao Pane Chane
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
57.Broadband GaN-Based Switch-Mode Core MMICs with 20 W Output Power Operating at UHF

机译：基于宽带GaN的开关模式核心MMIC，在UHF下具有20 W的输出功率
- 作者：Maroldt Stephan;Quay Rudiger;Haupt Christian;Ambacher Oliver
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
58.GaN Envelope Tracking Power Amplifier with More Than One Octave Carrier Bandwidth

机译：具有超过一个倍频程载波带宽的GaN包络跟踪功率放大器
- 作者：Yan Jonmei J.;Hsia Chin;Kimball Donald F.;Asbeck Peter M.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
59.An X-Band Low Phase Noise AlGaN-GaN-HEMT MMIC Push-Push Oscillator

机译：X波段低相位噪声AlGaN-GaN-HEMT MMIC推挽振荡器
- 作者：Zirath Herbert;Szhau Lai;Kuylenstierna Dan;Felbinger Jonathan;Andersson Kristoffer;Rorsman Niklas
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
60.InP/GaInAs pHEMT Ultralow-Power Consumption MMICs

机译：InP / GaInAs pHEMT超低功耗MMIC
- 作者：Liu L.;Alt A. R.;Benedickter H.;Bolognesi C. R.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年
61.Fully Integrated 300 GHz Receiver S-MMICs in 50 nm Metamorphic HEMT Technology

机译：采用50 nm变形HEMT技术的完全集成300 GHz接收器S-MMIC
- 作者：Tessmann A.;Massler H.;Lewark U.;Wagner S.;Kallfass I.;Leuther A.
- 会议名称：《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》 | 2011年