Short-Channel AlGaN/GaN Field-Plated High-Electron-Mobility Transistors for X-Band High Power Operation

摘要

We present experimental results on the high frequency (10 GHz) operation of short-channel AlGaN/GaN field-plated high-electron-mobility transistors (FP-HEMTs). The gate-length of 0.25 urn, which is the shortest for FP-HEMTs on sapphire reported to date, h