Epitaxial NiSi2 source and drain technology for atomic-scale junction control in silicon nanowire MOSFETs

摘要

Epitaxial NiSi2 source and drain with dopant segregation technique is applied to silicon nanowire (SNW) MOSFETs. Growth of epitaxial NiSi2 is characterized by self-limiting growth behavior and stability of (111) facets. These features realize the layout of junction edges in atomic-scale. Advantage of epitaxial NiSi2 growth technique is demonstrated by performances of SNW MOSFETs.