The effects of Electrostatic Discharge (ESD), Electromigration (EM) and their interdependence on Cu interconnects are studied in this work. Transmission Line Pulse (TLP) stress verified that metal lines fail when they are Joule heated up to a critical temperature (T{sub}(crit)) [1]. Failure analysis (FA) showed the gradual growth of failure sites appearing above the copper melting point (T{sub}m=1084°C) and leading the metal line to open failure when T{sub}(crit) is reached. The pulse width dependence was investigated and the new data starting from 1.5ns showed agreement with the theoretical model and supported the existence of non-sharp transitions between the three main regimes in the Wunch-Bell like curve (adiabatic, thermal diffusion and steady state). It was shown for the first time that the latent damage caused by TLP could degrade EM lifetime depending on the wafer temperature and the applied current during EM stress. Lastly, to determine the current carrying capability near end of life (EOL) for the metal line, pre-EM stress followed by TLP (ESD) was performed for the first time.
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机译：在这项工作中研究了静电放电（ESD），电迁移（EM）及其对Cu互连的相互依存的影响。传输线脉冲（TLP）应力验证，当焦耳加热到临界温度时，金属线失效（T {{sub}（crit））[1]。失败分析（FA）显示出现在铜熔点（T {Sub} M = 1084°C）上方的故障部位的逐渐生长，并在达到{次}（CRIT）时导致金属线以打开故障。研究了脉冲宽度依赖性，从1.5ns开始的新数据显示了与理论模型的一致性，并支持了曲线（绝热，热扩散和稳态）中的三个主要制度之间的非急剧过渡存在。首次示出了第一次由TLP引起的潜伏损坏可能根据晶片温度和EM应力期间的施加电流来降低EM寿命。最后，为了确定金属线终生命末端（EOL）附近的电流承载能力，首次进行TLP（ESD）后的EM rescure。
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