A review of CMOS latchup and electrostatic discharge (ESD) in bipolar complimentary MOSFET (BiCMOS) Silicon Germanium technologies: Part II—Latchup

摘要

CMOS latchup and electrostatic discharge (ESD) continue to be a semiconductor quality and reliability area of interest as semiconductor components continue to be reduced to smaller dimensions. The combination of scaling, design integration, circuit performance objectives, new applications, and the evolving system environments, CMOS latchup and ESD robustness will continue to be a technology concern. With both the revolutionary and evolutionary changes in CMOS and Silicon Germanium semiconductor technologies, and changing product environments, new CMOS latchup and ESD requirements also continue in semiconductor design, device and chip-level simulation, design verification, chip-to-system evaluation, and the need for new latchup and ESD test specifications. Additionally, the issues of low cost, low power and radio frequency (RF) GHz performance objectives has lead to both revolutionary as well as derivative technologies; these have opened new doors for discovery, development and research in the area of latchup and ESD. Although latchup and ESD are not a new reliability arena, there are also new issues rising each year, making the latchup and ESD an area of continuous discovery, innovation and invention. In this paper, an introduction to latchup in CMOS and BiCMOS Silicon Germanium will be discussed.