首页> 外文会议>2006 8th International Conference on Solid-State and Integrated Circuit Technology(第八届国际固态和集成电路技术会议)论文集 >Investigation of nanowire orientation and embedded Si1-xGex source/drain influence on twin silicon nano-wire field effect transistor(TSNWFET)

【24h】

Investigation of nanowire orientation and embedded Si1-xGex source/drain influence on twin silicon nano-wire field effect transistor(TSNWFET)

机译：纳米线取向和嵌入式Si1-xGex源/漏对双硅纳米线场效应晶体管（TSNWFET）影响的研究

获取原文

页面导航

著录项
相似文献
相关主题

著录项

来源
《2006 8th International Conference on Solid-State and Integrated Circuit Technology(第八届国际固态和集成电路技术会议)论文集》|2006年|78-80|共3页
会议地点
作者

展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Investigations on the physical limitation and electrostatic improvement of a gate-all-around silicon nanowire transistor with Schottky barrier source/drain [J] . Zhaoyi Kang, Liangliang Zhang, Runsheng Wang, Semiconductor science and technology . 2009,第10期

机译：具有肖特基势垒源/漏的全栅硅纳米线晶体管的物理局限性和静电改善的研究
2. A Reliable Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) Based on Radio-Frequency Analysis [J] . Jae Hwa Seo, Young Jun Yoon, Hwan Gi Lee, Journal of nanoscience and nanotechnology . 2014,第11期

机译：基于射频分析的硅纳米线金属氧化物半导体场效应晶体管（MOSFET）源极和漏极串联电阻的可靠提取方法
3. Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis [J] . Kyung Rok Kim, Sunhae Shin, Seongjae Cho, Japanese journal of applied physics . 2013,第4Issue2期

机译：基于射频分析的硅纳米线金属氧化物半导体场效应晶体管源漏串联电阻的提取方法
4. Investigation of Nanowire Orientation and embedded Si_(1-x).Ge_x Source/Drain Influence on Twin Silicon Nano-Wire Field Effect Transistor (TSNWFET) [C] . Ming Li, Sung Dae Suk, Kyoung Hwan Yeo, International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN) . 2006

机译：纳米线取向和嵌入式Si_（1-x）.Ge_x源极/漏极对双硅纳米线场效应晶体管（TSNWFET）的影响的研究
5. Nanowire-based devices for electronic and optical applications: Solution-gated silicon nanowire field effect transistors and one-dimensional gold nanoparticle arrays [D] . Hu, Wenchong 2010

机译：用于电子和光学应用的基于纳米线的设备：溶液门控硅纳米线场效应晶体管和一维金纳米粒子阵列
6. Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors [O] . Yuanjie Lv, Zhaojun Lin, Lingguo Meng, 2012

机译：栅极长度与漏极-源极距离之比对AlGaN / AlN / GaN异质结构场效应晶体管中电子迁移率的影响
7. Influence of Source/Drain Residual Implant Lattice Damage Traps on Silicon Carbide Metal Semiconductor Field-Effect Transistor Drain I-V Characteristics [O] . Adjaye J., Mazzola M.S. 2012

机译：源/漏残余注入晶格损伤阱对碳化硅金属半导体场效应晶体管漏极IV特性的影响

获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

客服微信
服务号