Investigation of Nanowire Orientation and embedded Si_(1-x).Ge_x Source/Drain Influence on Twin Silicon Nano-Wire Field Effect Transistor (TSNWFET)

摘要

This paper describes TSNWFET devices with embedded Si_(1-x)Ge_x source/drain regions and different nanowire orientations. Thick Si_(1-x)Ge_x embedded source/drain and <110> channel orientation is found effective to enhance p-channel TSNWFET performance, while cause degradation for n-channel one. Thin Si_(1-x)Ge_x and <100> channel orientation is the preferred combination for keeping n-TSNWFET performance. With <110> channel orientation and thick Si_(1-x)Ge_x in source/drain, p-MOS current, for the first time, is even observed to exceed its n-type counterpart from the experiments.