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机译:基于射频分析的硅纳米线金属氧化物半导体场效应晶体管源漏串联电阻的提取方法
School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798, Republic of Korea;
School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798, Republic of Korea;
Department of Electrical Engineering, Stanford University, Stanford, CA 94305, U.S.A.;
School of Electronics Engineering, Kyungpook National University, Daegu 702-701, Republic of Korea;
School of Electronics Engineering, Kyungpook National University, Daegu 702-701, Republic of Korea;
机译:基于射频分析的硅纳米线金属氧化物半导体场效应晶体管(MOSFET)源极和漏极串联电阻的可靠提取方法
机译:单金属氧化物半导体场效应晶体管中寄生源极和漏极电阻的分离提取的雪崩热源方法
机译:迭代法精确提取超短沟道MOSFET的有效沟道长度和源/漏串联电阻
机译:基于Y函数的无结反型纳米线FET的串联电阻提取。
机译:应变对硅和锗p型金属氧化物半导体场效应晶体管的空穴迁移率的影响
机译:带有石墨烯和钛源极-漏极触点的二维MoS2场效应晶体管的功函数调整
机译:从I-V特性提取p-n二极管串联电阻的新方法及其在二极管基极低温导通分析中的应用