SILICON-ON-NOTHING METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

The present invention relates to a SON MOSFET and method of manufacturing the same, in which a blister is formed within a silicon substrate, thus improving the disadvantages of a bulk structure and a Silicon-On-Insulator (SOI) structure at the same time. The SON MOSFET according to the present invention comprises isolation insulating films formed at both upper sides of a silicon substrate, a gate insulating film and a gate electrode that are sequentially formed on a surface of the silicon substrate between the isolation insulating films, a source region and a drain region that are formed on the silicon substrate between the gate insulating film and the isolation insulating films, a blister formed within the silicon substrate under the gate insulating film, and a silicon channel, which is surrounded by the blister, the source region and the drain region, within the silicon substrate, wherein the blister is formed of hydrogen or helium ion.