Low injection profile of base current is of great importance while considering power-efficient system design. The base current in SiGe HBT at low VBEis higher than Si-BJT base current. This shows the adverse side of using the otherwise superior heterojunction SiGe-HBT over Si-BJT. This paper presents a physical model of low-injection base current and discusses the way this model can be used to estimate defect density in SiGe device.
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机译：在考虑节能系统设计时，基极电流的低注入特性非常重要。低V BE 时SiGe HBT中的基极电流高于Si-BJT基极电流。这显示了使用优于Si-BJT的异质结SiGe-HBT的不利方面。本文介绍了低注入基极电流的物理模型，并讨论了该模型可用于估算SiGe器件中缺陷密度的方法。
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