Low injection profile of base current is of great importance while considering power-efficient system design. The base current in SiGe HBT at low VBEis higher than Si-BJT base current. This shows the adverse side of using the otherwise superior heterojunction SiGe-HBT over Si-BJT. This paper presents a physical model of low-injection base current and discusses the way this model can be used to estimate defect density in SiGe device.
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机译：基准电流的低注射轮廓具有重要的同时，同时考虑节能系统设计。低V BE 的SIGE HBT中的碱基电流高于SI-BJT底电流。这表明使用否则优异的异质结SiGe-HBT通过Si-BJT的不良侧。本文介绍了低注射底电流的物理模型，并讨论了该模型可用于估计SiGe器件中缺陷密度的方式。
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