Base Transport Limited Current Gain Analysis for Low-Noise SiGe DHBTs

Khanduri Gagan; Panwar Brishbhan

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Base Transport Limited Current Gain Analysis for Low-Noise SiGe DHBTs

机译：低噪声SiGe DHBT的基本传输限制电流增益分析

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An analysis of current gain and cutoff frequency for very high maximum oscillation frequency NPN Si/SiGe/Si double heterojunction bipolar transistors (SiGe DHBTs) has been performed. The simulation results for a Box-Germanium and a Box-triangular-Germaniu

机译：已经对非常高的最大振荡频率NPN Si / SiGe / Si双异质结双极晶体管（SiGe DHBT）的电流增益和截止频率进行了分析。 Box-Gemanium和Box-triangular-Germaniu的仿真结果

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《Journal of Applied Sciences》 |2004年第4期|共5页
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Khanduri Gagan; Panwar Brishbhan;
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中图分类农业科学;
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1. Current transport of GaAsSb-based DHBTs with different emitter structures [J] . Chun-ting Pan, Che-ming Wang, Yue-ming Hsin, Solid-State Electronics . 2009,第6期

机译：具有不同发射极结构的基于GaAsSb的DHBT的电流传输
2. Base composition effects study on nbr current and current gain in sige HBT [J] . Davoodi H., Kaatuzian H. International Journal of Modern Physics, B. Condensed Matter Physics, Statistical Physics, Applied Physics . 2013,第19期

机译：Sige HBT中nbr电流和电流增益的基础组成效应研究
3. Simulation analysis of the DC current gain in an n-p-n a-Si:H/SiGe/Si heterojunction bipolar transistor [J] . Francesco G. Delia Corte, Fortunato Pezzimenti Microelectronics journal . 2004,第5期

机译：n-p-n a-Si：H / SiGe / Si异质结双极晶体管中直流电流增益的仿真分析
4. Current Gain Modeling of SiGe DHBTs in SPICE Including Retarding Potential Barrier Effect [C] . Gagan Khanduri, Brishbhan Panwar IEEE SoutheastCon . 2007

机译：香料中SiGe DHBTS的电流增益建模，包括延迟潜在的屏障效应
5. A Variable Gain Low-Noise Amplifier for Use in an Integrated Television Tuner [D] . Klett, Robert. 2011

机译：可变增益低噪声放大器，用于集成电视调谐器
6. Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes [O] . Ashutosh Kumar, M. Heilmann, Michael Latzel, -1

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7. ERRATUM: "BASE COMPOSITION EFFECTS STUDY ON NBR CURRENT AND CURRENT GAIN IN SiGe HBT" [O] . HOSSEIN DAVOODI, HASSAN KAATUZIAN 2013

机译：错误：“SiGE HBT中NBR电流和电流增益的基础组成效应研究”
8. Common base amplifier with 7-dB gain at 176 GHz in InP mesa DHBT technology [R] . Paidi, V., Griffith, Z., Wei, Y., 2004

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Base Transport Limited Current Gain Analysis for Low-Noise SiGe DHBTs

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