A Compact, Analytical Two-dimensional Threshold Voltage Model for Cylindrical, Fully-depleted, Surrounding-Gate(SG) MOSFETs

摘要

Based on two-dimensional(2D) potential analysis, a compact, analytical model for threshold voltage in cylindrical, fully-depleted, surrounding-gate(SG) MOSFETs is derived. The minimum surface potential μmin,surfaceis used to develop the threshold voltage model. Besides decreasing the characteristic factor, both the thin silicon body and gate oxide can reduce the threshold voltage roll-off simultaneously. It is also found that the threshold voltage shift is dependent on the scaling factor of λ1L. The high scaling factor is preferred to alleviate threshold voltage degradation.