Patterning of Random Interconnect Using Double Exposure of Strong-Type PSMs

摘要

This paper discusses a new PSM algorithm to generate a pair of sub-mask patterns to achieve 2-D random patterns by double exposure. Test layout was automatically decomposed into two sub-PSMs with about 190 steps of geometrical operations including simple OPCs. Both simulation and experiments showed that 0.28-um pitch random wiring is achieved with our method, suggesting local wiring at 70- (50-) nm node logic LSIs combined with ArF (F2) exposure tools.