首页> 外国专利> Method For Improved Lithographic Patterning Utilizing Multiple Coherency Optimized Exposures And High Transmission Attenuated PSM

Method For Improved Lithographic Patterning Utilizing Multiple Coherency Optimized Exposures And High Transmission Attenuated PSM

机译:利用多相干优化曝光和高透射衰减PSM改进光刻图案的方法

摘要

Using an optical exposure tool to a method for optically transferring a lithographic pattern corresponding to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate. The method includes the steps of: a step of generating a diffraction pattern corresponding to a lithographic pattern, the diffraction pattern is generated, it characterized in that a diffraction pattern indicating a plurality of spatial frequency components corresponding to said lithographic pattern; Step to which of the spatial frequency components in order to accurately simulate the lithographic pattern determining whether there is a need to be captured by a lens in said optical exposure tool; Determining a set of illumination conditions required for said optical exposure tool to capture said spatial frequency components necessary for accurately simulating the lithographic pattern; And a step of illuminating the high transmission attenuated phase shift mask with said set of said illumination conditions.
机译:将光学曝光工具用于将与利用高透射衰减相移掩模的集成电路相对应的光刻图案光学地转印到半导体基板上的方法。该方法包括以下步骤:产生与光刻图案相对应的衍射图案的步骤,产生该衍射图案,其特征在于,衍射图案指示与所述光刻图案相对应的多个空间频率分量;以及为了准确地模拟光刻图案,确定在所述空间曝光分量中的哪个空间频率分量上确定是否需要由所述光学曝光工具中的透镜捕获;确定所述曝光工具捕获精确模拟光刻图案所需的所述空间频率分量所需的一组照明条件;以及用所述一组所述照明条件来照明高透射率衰减相移掩模的步骤。

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