High performance buried heterostructure 1.55 /spl mu/m wavelength AlGaInAs/InP multiple quantum well lasers grown entirely by MOVPE technique

摘要

The fabrication and characterization of a high quality buried heterostructure (BH) type 1.55 /spl mu/m wavelength strained AlGaInAs/InP MQW laser is reported. The lasers have low threshold current density (600 A/cm/sup 2/) for compressively strained MQW measured from a BH chip with cavity lengths of 545 /spl mu/m and 1.5 /spl mu/m wide. Low threshold current of less than 10 mA (2 mA with HR facets coated) is obtained. The differential modal gain of the AlGaInAs devices was also found to be superior to that of the conventional strained GaInAsP system.