AlGaInAs/InP应变补偿多量子阱激光器

摘要

为了优化在长距离光纤通讯系统中采用的1.31μm波长的量子阱激光器,对AlGaInAs/InP材料的有源区应变补偿的量子阱激光器进行了设计研究.采用应变补偿的方法,根据克龙尼克-潘纳模型理论计算出量子阱的能带结构,设计出有源区由1.12%的压应变AlGaInAs阱层和0.4%的张应变AlGaInAs垒层构成.使用ALDS软件对所设计出的器件进行了建模仿真,对其进行了阈值分析和稳态分析.结果表明,在室温25℃下,该激光器具有9mA的低阈值电流和0.4W/A较高的单面斜率效率;在势垒层采用与势阱层应变相反的适当应变,可以降低生长过程中的平均应变量,保证有源区良好的生长,改善量子阱结构的能带结构,提高对载流子的限制能力,降低阈值电流,提高饱和功率,改善器件的性能.%In order to optimize the quantum well laser at 1.31μm wavelength in long distance optical fiber communication systems, strain compensated quantum well in active region of AlGaInAs/InP material was studied.Based on strain compensation method and Kronig-Panna model theory, the band structure of quantum well was calculated.The active region was consisted of 1.12% compressive strain AlGaInAs well layer and 0.4% tensile strain AlGaInAs barrier layer.ALDS software was used to simulate the design of the device and analyze the threshold and the steady state.The results show that the laser has a low threshold current of 9mA and a high slope efficiency of 0.4W/A at 25℃room temperature.In the potential barrier layer, the appropriate strain opposite to the strain of the potential well layer can reduce the average strain in the growth process, ensure the well growth of active zone, improve the band structure of quantum well effectively, enhance the limit ability of carriers, reduce threshold current, increase saturation power and improve device performance.