Magnetoluminescence characterization of lattice matched n-type InGaAs/InAlAs/InP MQWs on InP

摘要

Abstract: A knowledge of the energy-band energies and masses are important parameters for the design of semiconductor lasers and light-emitting diodes. We present results of a magnetoluminescence study on n-type InGaAs/InAlAs multiple quantum wells lattice matched to InP. From an analysis of low-temperature magnetoluminescence data, a simultaneous measurement of the in-plane conduction and valence-band masses is made. We find, assuming parabolic bands, that the conduction and valence-band masses are respectively m$-c$/ $APEQ 0.069 m$-0$/ and m$-v$/ $APEQ 0.061 m$-0$/, where m$- 0$/ is the free electron mass. Fitting a nonparabolic conduction-band dispersion curve to the data yields a zone- center mass m$-c$/ $APEQ 0.056 m$-0$/ and m$-v$/ approximately 0.102 m$-0$/. !25