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Physics and Simulation of Optoelectronic Devices V

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1.Doppler-shifted self-reflected wave from a semiconductor,

机译：来自半导体的多普勒频移自反射波，
- 作者：Alex Schuelzgen;Optical Sciences Ctr./Univ. of Arizona;Tucson;AZ;USA;S.Hughes;Optical Sciences Ctr./Univ. of Arizona;Tucson;AZ;USA;Nasser Peyghambarian;Optical Sciences Ctr./Univ. of Arizona;Tucson;AZ;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
2.Improvement of the Gaussian approximation for the field of weakly guidingoptical fibers,

机译：弱导光纤领域的高斯近似的改进，
- 作者：Gemma De Angelis;Politecnico di Bari;Bari BA;Italy;Gaetano Panariello;Univ. di Napoli Federico II;Naples;Italy;Antonio Scaglione;Univ. di Salerno;Fisciano SA;Italy.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
3.Polymer-based electro-optic modulator with microwave shield for high-speed a

机译：带有微波屏蔽层的聚合物基电光调制器，用于高速传输
- 作者：Palle G. Dinesen;Technical Univ. of Denmark;Lyngby;Denmark;Joern H. Povlsen;Technical Univ. of Denmark;Lyngby;Denmark.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
4.Induced focusing in ZnSe

机译：ZnSe中的诱导聚焦
- 作者：George G. King;Univ. of Connecticut;Storrs;CT;USA;Eric Donkor;Univ. of Connecticut;Ashford;CT;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
5.Detection of lateral composition modulation in an (InAs)n/(GaAs)n short-period superlattice on InP by magnetoexciton spectroscopy

机译：磁激谱法检测InP上（InAs）n /（GaAs）n短周期超晶格中的横向成分调制
- 作者：Eric D. Jones;Sandia National Labs.;Albuquerque;NM;USA;Joanna Mirecki-Millunchick;Sandia National Labs.;Albuquerque;NM;USA;David M. Follstaedt;Sandia National Labs.;Albuquerque;NM;USA;Michael J. Hafich;Sandia National Labs.;Albuquerque;NM;USA;S.Lee;Sandia National Labs.;Albuquerque;NM;USA;J.Reno;Sandia National Labs.;Albuquerque;NM;USA;Ray D. Twesten;Sandia National Labs.;Albuquerque;NM;USA;Yong Zhang;National Renewable Energy Lab.;Golden;CO;USA;Angelo J. Mascarenhas;National Renewable Energy Lab.;Golden;CO;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
6.Fabrication of LD-3 polymer directional couplers

机译：LD-3聚合物定向耦合器的制造
- 作者：John M. Taboada;Univ. of Texas at Austin;Austin;TX;USA;Guohua Cao;Univ. of Texas at Austin;Austin;TX;USA;Huajun Tang;Univ. of Texas at Austin;Austin;TX;USA;Jeffery J. Maki;Radiant Research;Inc.;Austin;TX;USA;Suning Tang;Radiant Research;Inc.;Austin;TX;USA;Ray T. Chen;Univ. of Texas at Austin;Austin;TX;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
7.Hysteresis in a directly modulated semiconductor laser

机译：直接调制半导体激光器中的磁滞
- 作者：Guillermo Carpintero;Univ. Carlos III de Madrid;Madrid;Spain;F.Mancebo;Univ. Politecnica de Madrid;Madrid;Spain;Horacio Lamela;Univ. Carlos III de Madrid;Leganes-Madrid;Spain;Pablo Acedo;Univ. Carlos III de Madrid;Madrid;Spain;J.M. Vega;Univ. Politecnica de Madrid;Madrid;Spain.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
8.Reflectivity of two-dimensional waveguide facets using the vector free space radiation mode method

机译：使用矢量自由空间辐射模式方法的二维波导面的反射率
- 作者：Martin Reed;Univ. of Nottingham;Nottingham;United Kingdom;P.Sewell;Univ. of Nottingham;Nottingham;United Kingdom;T.M. Benson;Univ. of Nottingham;Nottingham;United Kingdom;P.C. Kendall;Univ. of Nottingham;Nottingham;United Kingdom.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
9.Theory of momentum orientation relaxation in semiconductors

机译：半导体中动量取向弛豫理论
- 作者：Rudolf H. Binder;Optical Sciences Ctr./Univ. of Arizona;Tucson;AZ;USA;Hilding S. Koehler;Optical Sciences Ctr./Univ. of Arizona;Tucson;AZ;USA;Nai-Hang Kwong;Optical Sciences Ctr./Univ. of Arizona;Tucson;AZ;USA;Michael Bonitz;Univ. Rostock;Rostock;Germany.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
10.Numerical modeling of light beam propagation in nonlinear waveguide media: effects of misalignment and inhomogeneous broadening

机译：非线性波导介质中光束传播的数值模型：未对准和不均匀展宽的影响
- 作者：Leonid A. Melnikov;Saratov State Univ.;Saratov;Russia;Vladimir L. Derbov;Saratov State Univ.;Saratov;Russia;Aleksey I. Bychenkov;Saratov State Univ.;Saratov;Russia;Olga M. Priyutova;Saratov State Univ.;Saratov;Russia.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
11.Optimization of the negative prechirping Franz-Keldysh InGaAsP bulk electroabsorption modulator

机译：负线性调频Franz-Keldysh InGaAsP本体电吸收调制器的优化
- 作者：Byung-Gee Kim;Chung-Ang Univ.;Seoul;South Korea;Jeong-Ho Lee;Chung-Ang Univ.;Seoul;South Korea;Young-Wan Choi;Chung-Ang Univ.;Seoul;South Korea.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
12.Polarization dynamics and intensity noise in VCSELs

机译：VCSEL中的偏振动力学和强度噪声
- 作者：S.P. Hegarty;National Univ. of Ireland College Cork;Cork;Ireland;G.Huyet;National Univ. of Ireland College Cork;Cork;Ireland;John G. McInerney;National Univ. of Ireland College Cork;Optical Sc iences Ctr./Univ. of Arizona;Cork;Ireland;Hua Li;Univ. of New Mexico;Albuquerque;NM;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
13.Prediction of low threshold current density in InGaN-AlGaN quantum wire lasers due to excitonic transitions

机译：激子跃迁对InGaN-AlGaN量子线激光器中低阈值电流密度的预测
- 作者：Wenli Huang;Trinity College;Hartford;CT;USA;Frank C. Jain;Univ. of Connecticut;Storrs;CT;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
14.Self-assembled visible-bandgap II-VI quantum dots

机译：自组装可见带隙II-VI量子点
- 作者：M.Lowisch;Humboldt-Univ. zu Berlin;Berlin;Germany;Michael Rabe;Humboldt-Univ. zu Berlin;Berlin;Germany;B.Stegemann;Humboldt-Univ. zu Berlin;Berlin;Germany;Fritz Henneberger;Humboldt-Univ. zu Berlin;Berlin;Germany.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
15.Doppler-shifted self-reflected wave from a semiconductor

机译：来自半导体的多普勒频移自反射波
- 作者：Author(s): Alex Schuelzgen Optical Sciences Ctr./Univ. of Arizona Tucson AZ USA;S.Hughes Optical Sciences Ctr./Univ. of Arizona Tucson AZ USA;Nasser Peyghambarian Optical Sciences Ctr./Univ. of Arizona Tucson AZ USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
16.Behavior of HE1m mode wavenumbers and power flow near the cutoff frequency in absorbing fiber tapers

机译：HE1m模波数和功率流在截止频率附近的行为在吸收光纤锥度中
- 作者：Leonid A. Melnikov;Saratov State Univ.;Saratov;Russia;Elena A. Romanova;Saratov State Agriculture Engineering Univ.;Saratov;Russia.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
17.Calculation of microcavity VCSEL field modes using a doubly iterative weighted index method

机译：使用双迭代加权指数方法计算微腔VCSEL场模式
- 作者：Michael J. Noble;Air Force Insitute of Technology;Wright Patterson;OH;USA;John P. Loehr;Air Force Wright Lab.;Wright-Patterson AFB;OH;USA;James A. Lott;Air Force Institute of Technology;Wright Patterson Afb;OH;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
18.Coupling effect in a vertical-cavity surface-emitting laser structure observed by photoreflectance spectroscopy

机译：用光反射光谱法观察垂直腔表面发射激光器结构中的耦合效应
- 作者：P.D. Berger;INSA de Lyon;Villeurbanne Cedex;France;C.Bru-Chevallier;INSA de Lyon;Villeurbanne Cedex;France;Taha Benyattou;INSA de Lyon;Villeurbanne Cedex;France;Gerard Guillot;INSA de Lyon;Villeurbanne Cedex;France;Philippe Grosse;LETI/CEA-Technologies Avancees;Grenoble Cedex;France;Laurent Couturier;LETI/CEA-Technologies Avancees;Grenoble cedex;France;Andre L. Chenevas-Paule;LETI/CEA-Technologies Avancees;Grenoble Cedex 9;France.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
19.FDTD simulation of optoelectronic switches

机译：光电开关的FDTD仿真
- 作者：Xudong Wang;Univ. of Utah;University of Utah;UT;USA;R.J. Hwu;Univ. of Utah;Salt Lake City;UT;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
20.Large-signal analysis of self-pulsating laser diodes

机译：自脉冲激光二极管的大信号分析
- 作者：Mike J. Adams;Univ. of Essex;Colchester;United Kingdom;Chanjira Sinthanayothin;Univ. of Essex;Strand;London;United Kingdom.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
21.Magnetoluminescence characterization of lattice matched n-type InGaAs/InAlAs/InP MQWs on InP

机译：InP上晶格匹配n型InGaAs / InAlAs / InP MQW的磁致发光特性
- 作者：Eric D. Jones;Sandia National Labs.;Albuquerque;NM;USA;Nobuo Kotera;Kyushu Institute of Technology;Fukuoka;Japan;Tomoyoshi Mishima;Hitachi Ltd.;Tokyo;Japan;H.Nakamura;Hitachi Ltd.;Katuta-shi;Ibaraki-ken;Japan;Noboru Miura;Univ. of Tokyo;Tokyo;Japan;C.P. Tigges;Sandia National Labs.;Albuquerque;NM;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
22.Modeling the lasing mode in a three-dimensionally confined Fabry-Perot microcavity

机译：在三维约束的Fabry-Perot微腔中建模激光模式
- 作者：Qing Deng;Univ. of Texas at Austin;Austin;TX;USA;Dennis G. Deppe;Univ. of Texas at Austin;Austin;TX;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
23.(BAlGa)N quaternary system and epitaxial growth on (0001)6H-SiC substrate by low-pressure MO-VPE

机译：低压MO-VPE在（0001）6H-SiC衬底上的（BAlGa）N四元体系及其外延生长
- 作者：Hideo Kawanishi;Kohgakuin Univ.;Tokyo;Japan;Makiko Haruyama;Kohgakuin Univ.;Tokyo;Japan;Toshi Shirai;Kohgakuin Univ.;Tokyo;Japan;Yasuharu Suematsu;National Institute for Advanced Interdisciplinary Res earch;Tskuba Science City;Japan.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
24.Physics of semiconductor microcavities and microcavity lasers

机译：半导体微腔和微腔激光器的物理
- 作者：M.Kira;Philipps-Univ. Marburg;Marburg;Germany;Stephan W. Koch;Philipps-Univ. Marburg;Marburg;Germany;Frank Jahnke;Philipps-Univ. Marburg;Marburg;Germany.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
25.Polarization characterization of self-imaging GaAs/AlGaAs waveguide beamsplitters using Mueller matrix imaging polarimetry

机译：使用Mueller矩阵成像旋光法自成像GaAs / AlGaAs波导分束器的偏振特性
- 作者：Matthew H. Smith;Univ. of Alabama in Huntsville;Huntsville;AL;USA;Elizabeth A. Sornsin;Univ. of Alabama in Huntsville;Huntsville;AL;USA;Tristan J. Tayag;Army Research Lab.;Adelphi;MD;USA;Russell A. Chipman;Univ. of Alabama in Huntsville;Huntsville;AL;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
26.Spatiotemporal dynamics in the near field of a 980-nm ridge waveguide pump laser diode

机译：980 nm脊形波导泵浦激光二极管近场的时空动力学
- 作者：Markus O. Ziegler;Philipps-Univ. Marburg;Marburg;Germany;E.Miltenyi;Philipps-Univ. Marburg;Marburg;Germany;M.Muenkel;Technical Univ. Darmstadt;Darmstadt;Germany;J.Greif;Philipps-Univ. Marburg;Marburg;Germany;G.Jennemann;Technical Univ. Darmstadt;Darmstadt;Germany;I.Fischer;Technical Univ. Darmstadt;Darmstadt;Germany;Harry M. Asonen;Tampere Univ. of Technology;Tampere;Finland;Wolfgang E. Elsaesser;Technical Univ. Darmstadt;Darmstadt;Germany.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
27.Theoretical analysis of optical gain and exciton effect in GaN/AlGaN quantum wells

机译：GaN / AlGaN量子阱中光增益和激子效应的理论分析
- 作者：Takeshi Uenoyama;Matsushita Electric Industrial Co.;Ltd.;Kyoto;Japan;Masakatsu Suzuki;Matsushita Electric Industrial Co.;Ltd.;Kyoto;Japan.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
28.Theory of ultrafast optical nonlinearities of uniaxially strained quantum wells

机译：单轴应变量子阱的超快光学非线性理论
- 作者：Rudolf H. Binder;Optical Sciences Ctr./Univ. of Arizona;Tucson;AZ;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
29.Wavelength tuning and intensity noise in diode laser butt coupling

机译：二极管激光对接耦合中的波长调谐和强度噪声
- 作者：Yakov S. Sidorin;Optical Sciences Ctr./Univ. of Arizona;Tucson;AZ;USA;Pentti Karioja;VTT Electronics;Oulu;Finland;Dennis G. Howe;Optical Sciences Ctr./Univ. of Arizona;Tucson;AZ;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
30.Characterization and modeling of InGaAs/GaAs multiple quantum well lasers by capacitance-voltage measurements

机译：InGaAs / GaAs多量子阱激光器的电容电压表征和建模
- 作者：Author(s): Julia Arias Univ. Politecnica de Madrid Madrid Spain;Ignacio Esquivias Univ. Politecnica de Madrid Madrid Spain;Susann Buerkner Fraunhofer-Institut fuer Angewandte Festkoeperphysik Freiburg Germany;Pierre Chazan Fraunhofer-Institut fuer Angewandte Festkoeperphysik Freiburg Germany;John D. Ralston Fraunhofer-Institut fuer Angewandte Festkoerperphysik (FRG) and SDL Inc. San Jose CA USA;E.C. Larkins Fraunhofer-Institut fuer Angewandte Festkoerperphysik (FRG) and Univ. of Nottingham Nottingham United Kingdom;M.Mikulla Fraunhofer-Institut fuer Angewandte Festkoeperphysik Freiburg Im Breisgau Germany;S.Weisser Fraunhofer-Institut fuer Angewandte Festkoeperphysik Freiburg Im Breisgau Germany;Josef Rosenzweig Fraunhofer-Institut fuer Angewandte Festkoeperphysik Freiburg Im Breisgau Germany.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
31.Analysis of fully depleted differential double-heterojunction optical thyristor using MQWs and mirror layers

机译：使用MQW和镜面层分析完全耗尽的差分双异质结光学晶闸管
- 作者：Jeong-Ho Lee;Chung-Ang Univ.;Seoul;South Korea;Byung-Gee Kim;Chung-Ang Univ.;Seoul;South Korea;Young-Wan Choi;Chung-Ang Univ.;Seoul;South Korea.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
32.Analysis of soliton stability and interactions in a system with nonlinear gain

机译：具有非线性增益的系统中孤子稳定性和相互作用的分析
- 作者：Mario F. Ferreira;Univ. de Aveiro;Aveiro;Portugal.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
33.Carrier transport effects on pulse statistics of modulated quantum well lasers

机译：载流子传输对调制量子阱激光器的脉冲统计的影响
- 作者：Luis Pesquera;Instituto de Fisica de Cantabria;Santander;Spain;N.Mustafa;Instituto de Fisica de Cantabria;Univ. de Cantabr ia;Santander;Spain;Ignacio Esquivias;Univ. Politecnica de Madrid;Madrid;Spain.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
34.Effect of strain on the Auger recombination processes in type-II heterostructures with QWs

机译：应变对具有QW的II型异质结构中俄歇复合过程的影响
- 作者：Aleksey D. Andreev;A.F. Ioffe Physical-Technical Institute;St. Petersburg;Russia;Georgy G. Zegrya;A.F. Ioffe Physical-Technical Institute;St. Petersburg;Russia.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
35.FD-BPM modeling of vertical-cavity surface-emitting lasers

机译：垂直腔面发射激光器的FD-BPM建模
- 作者：Hans Bissessur;Tokyo Institute of Technology;Yokohama;Japan;Kenichi Iga;Tokyo Institute of Technology;Yokohama;Japan.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
36.Gain spectra and optical transition probability in doped quantum well heterostructures

机译：掺杂量子阱异质结构的增益光谱和光学跃迁几率
- 作者：Alexander A. Afonenko;Byelorussian State Univ.;Minsk;Belarus;Valerii K. Kononenko;Stepanov Institute of Physics;Minsk;Belarus;Ivan S. Manak;Byelorussian State Univ.;Minsk;Belarus.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
37.Heating of the front and rear facets of GaAlAs/GaAs edge emitting laser diodes

机译：GaAlAs / GaAs边缘发射激光二极管的正面和背面的加热
- 作者：Uwe Menzel;Max-Born-Institut fuer Nichtlineare Optik und Kurzzei tspektroskopie;Berlin;Germany;Roland Puchert;Max-Born-Institut fuer Nichtlineare Optik und Kurzzei tspektroskopie;Berlin;Germany;A.Baerwolff;Max-Born-Institut fuer Nichtlineare Optik und Kurzzei tspektroskopie;Berlin;Germany;A.Lau;Max-Born-Institut fuer Nichtlineare Optik und Kurzzei tspektroskopie;Berlin;Germany.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
38.Lasing modes in highly confined semiconductor microcavities

机译：高度受限的半导体微腔中的激光模式
- 作者：Dennis G. Deppe;Univ. of Texas at Austin;Austin;TX;USA;Diana L. Huffaker;Univ. of Texas at Austin;Austin;TX;USA;Hongyu Deng;Univ. of Texas at Austin;Cupertino;CA;USA;Tchang-Hun Oh;Univ. of Texas at Austin;Austin;TX;USA;Qing Deng;Univ. of Texas at Austin;Austin;TX;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
39.Microcavity effects in an external-cavity surface-emitting laser

机译：外腔表面发射激光器中的微腔效应
- 作者：John V. Sandusky;Univ. of New Mexico;Pasadena;CA;USA;Steven R. Brueck;Univ. of New Mexico;Albuquerque;NM;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
40.Modeling of master oscillator-power amplifier (MOPA) semiconductor lasers

机译：主振荡器-功率放大器（MOPA）半导体激光器的建模
- 作者：Peter M. Skovgaard;National Univ. of Ireland College Cork;Cork;Ireland;John G. McInerney;National Univ. of Ireland College Cork;Cork;Ireland;Jerome V. Moloney;Optical Sciences Ctr./Univ. of Arizona;Tucson;AZ;USA;Robert A. Indik;Optical Sciences Ctr./Univ. of Arizona;Tucson;AZ;USA;Cun Z. Ning;Optical Sciences Ctr./Univ. of Arizona;Moffett Field;CA;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
41.Modeling of semiconductor lasers by multisection digital analysis

机译：通过多部分数字分析对半导体激光器建模
- 作者：Horacio Lamela;Univ. Carlos III de Madrid;Leganes-Madrid;Spain;Guillermo Carpintero;Univ. Carlos III de Madrid;Madrid;Spain;Pablo Acedo;Univ. Carlos III de Madrid;Madrid;Spain;M.Leones;Univ. Carlos III de Madrid;Leganes;Spain;A.Abella;Univ. Carlos III de Madrid;Leganes;Spain.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
42.Modeling tools in waveguide optics

机译：波导光学中的建模工具
- 作者：Zdzislaw Jakubczyk;Optiwave Corp.;Nepean;ON;Canada;Miroslaw Florjanczyk;Optiwave Corp.;Nepean;ON;Canada;Velko P. Tzolov;Optiwave Corp.;Nepean;ON;Canada.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
43.Polarization and transverse-mode selection in birefringent vertical-cavity surface-emitting lasers

机译：双折射垂直腔面发射激光器中的偏振和横模选择
- 作者：Angel Valle;Instituto de Fisica de Cantabria;Santander;Spain;Luis Pesquera;Instituto de Fisica de Cantabria;Santander;Spain;K.A. Shore;Univ. of Wales Bangor;Bangor;United Kingdom.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
44.Spontaneous-emission measurements in broad-area quantum well semiconductor lasers

机译：广域量子阱半导体激光器中的自发测量
- 作者：Malcolm W. Wright;Air Force Phillips Lab.;Univ. of New Mexico;Kirtland AFB;NM;USA;David J. Bossert;Air Force Phillips Lab.;Kirtland AFB;NM;USA;Gregory C. Dente;GCD Associates;Albuquerque;NM;USA;Michael L. Tilton;Rockwell Power Systems Co.;Albuquerque;NM;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
45.Theoretical study of electromagnetic eigenmodes of VCSELs

机译：VCSEL电磁本征模的理论研究
- 作者：Dariusz Burak;Optical Sciences Ctr./Univ. of Arizona;Tucson;AZ;USA;Rudolf H. Binder;Optical Sciences Ctr./Univ. of Arizona;Tucson;AZ;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
46.Two coupled semiconductor lasers in transient regime: equivalent circuit analysis

机译：两耦合瞬态半导体激光器：等效电路分析
- 作者：Horacio Lamela;Univ. Carlos III de Madrid;Leganes-Madrid;Spain;Guillermo Carpintero;Univ. Carlos III de Madrid;Madrid;Spain;Pablo Acedo;Univ. Carlos III de Madrid;Madrid;Spain;J.A. Garcia;Univ. Carlos III de Madrid;Madrid;Spain.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
47.Improvement of the Gaussian approximation for the field of weakly guiding optical fibers

机译：弱导光纤领域的高斯近似的改进
- 作者：Author(s): Gemma De Angelis Politecnico di Bari Bari BA Italy;Gaetano Panariello Univ. di Napoli Federico II Naples Italy;Antonio Scaglione Univ. di Salerno Fisciano SA Italy.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
48.Avalance photodetectors with an electrically isolated guard ring

机译：具有电隔离保护环的雪崩光电探测器
- 作者：Babatunde Odubanjo;Columbia Univ.;New York;NY;USA;C.S. Wang;Epitaxx Optoelectronics;West Trenton;NJ;USA;Wen I. Wang;Columbia Univ.;Irvington;NY;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
49.Electron escape dynamics from a biased quantum well

机译：来自有偏量子阱的电子逸出动力学
- 作者：Kevin R. Lefebvre;Univ. of Connecticut;Storrs;CT;USA;A.F. Anwar;Univ. of Connecticut;Storrs Mansfield;CT;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
50.Epitaxial structure dependence of the linewidth enhancement factor in GaAs and InGaAs quantum well lasers

机译：GaAs和InGaAs量子阱激光器中线宽增强因子的外延结构依赖性
- 作者：Jonathan Stohs;Univ. of New Mexico;Albuquerque;NM;USA;David J. Gallant;Rocketdyne Technical Services;Albuquerque;NM;USA;David J. Bossert;Air Force Phillips Lab.;Kirtland AFB;NM;USA;Steven R. Brueck;Univ. of New Mexico;Albuquerque;NM;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
51.Gain and index saturation in circular-grating distributed-feedback semiconductor lasers

机译：圆光栅分布反馈半导体激光器的增益和折射率饱和
- 作者：Keith J. Kasunic;Optical Sciences Ctr./Univ. of Arizona;Tucson;AZ;USA;Mahmoud Fallahi;Optical Sciences Ctr./Univ. of Arizona;Tucson;AZ;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
52.Hot carrier effects in conventional injection and tunneling injection quantum well laser diodes

机译：传统注入和隧穿注入量子阱激光二极管中的热载流子效应
- 作者：Matthew E. Grupen;Univ. of Illinois/Urbana-Champaign;Urbana;IL;USA;Karl Hess;Univ. of Illinois/Urbana-Champaign;Urbana;IL;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
53.II-VI electro-optical devices for visible-wavelength modulation

机译：II-VI可见光调制电光设备
- 作者：Harald Babucke;Humboldt-Univ. zu Berlin;Berlin;Germany;Peter Thiele;Humboldt-Univ. zu Berlin;Berlin;Germany;Michael Rabe;Humboldt-Univ. zu Berlin;Berlin;Germany;Torsten Prasse;Humboldt-Univ. zu Berlin;Berlin;Germany;Fritz Henneberger;Humboldt-Univ. zu Berlin;Berlin;Germany.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
54.Space-time simulation of high-brightness semiconductor lasers

机译：高亮度半导体激光器的时空模拟
- 作者：Jerome V. Moloney;Univ. of Arizona;Tucson;AZ;USA;Robert A. Indik;Univ. of Arizona;Tucson;AZ;USA;Cun Z. Ning;Univ. of Arizona;Moffett Field;CA;USA;Aidan Egan;Univ. of Arizona;Tucson;AZ;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
55.ZnMgSSe-based laser diodes

机译：ZnMgSSe基激光二极管
- 作者：H.Noguchi;Sony Corporation Research Ctr.;Yokoham;Japan;S.Tomiya;Sony Corporation Research Ctr.;Yokohama;Japan;Shun Lien Chuang;Univ. of Illinois/Urbana-Champaign;Urbana;IL;USA;Akira Ishibashi;Sony Corporation Research Ctr.;Yokohama;Japan.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
56.Analysis of one-way coupling between asymmetric highly multimode waveguides

机译：非对称高度多模波导之间的单向耦合分析
- 作者：De-Gui Sun;Univ. of Texas at Austin;Austin;TX;USA;Jeffery J. Maki;Radiant Research;Inc.;Austin;TX;USA;Ray T. Chen;Univ. of Texas at Austin;Austin;TX;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
57.Analytical theory of phase-locked arrays of antiguided diode lasers

机译：反导二极管激光器锁相阵列的分析理论
- 作者：Anatolii A. Napartovich;Troitsk Institute for Innovation;Fusion Research;Troitsk;Moscow Region;Russia;Dan Botez;Univ. of Wisconsin/Madison;Madison;WI;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
58.Beryllium-containing materials for II-VI laser diodes

机译：用于II-VI激光二极管的含铍材料
- 作者：Andreas Waag;Purdue Univ.;West Lafayette;IN;USA;Th. Litz;Univ. Wuerzburg;Wuerzburg;Germany;F.Fischer;Univ. Wuerzburg;Wuerzburg;Germany;H.-. Lugauer;Univ. Wuerzburg;Wuerzburg;Germany;Robert L. Gunshor;Purdue Univ.;West Lafayette;IN;USA;Gottfried Landwehr;Univ. Wuerzburg;Wuerzburg;Germany.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
59.GaAs compliant substrates: a new substrate with a stretchable lattice for mismatched III-V epitaxial growth

机译：符合GaAs的基板：具有可拉伸晶格的新型基板，可用于不匹配的III-V外延生长
- 作者：Felix E. Ejeckam;Cornell Univ.;Ithaca;NY;USA;Yi Qian;Cornell Univ.;Ithaca;NY;USA;Shanthi Subramanian;Cornell Univ.;Ithaca;NY;USA;Hong Q. Hou;Sandia National Labs.;Albuquerque;NM;USA;B.E. Hammons;Sandia National Labs.;Albuquerque;NM;USA;Zuhua Zhu;Cornell Univ.;Ithaca;NY;USA;Yu-Hwa Lo;Cornell Univ.;Ithaca;NY;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
60.Modeling of current crowding accompanying optical filament formation in semiconductor lasers and amplifiers

机译：半导体激光器和放大器中伴随光丝形成的电流拥挤建模
- 作者：Petr G. Eliseev;Univ. of New Mexico;Albuquerque;NM;USA;A.G. Glebov;Univ. of New Mexico;Albuquerque;NM;USA;Marek Osinski;Univ. of New Mexico;Albuquerque;NM;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
61.Modeling of the linewidth enhancement factor in multiple quantum well InGaAsP-based lasers

机译：基于多量子阱InGaAsP的激光器中线宽增强因子的建模
- 作者：Mark S. Hybertsen;Lucent Technologies Bell Labs.;Murray Hill;NJ;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
62.Physical models and numerical simulation of modern semiconductor lasers

机译：现代半导体激光器的物理模型和数值模拟
- 作者：Z-.M. Li;Crosslight Software Inc.;Gloucester;ON;Canada.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
63.Present status of short-wavelength group-III nitride-based laser diodes

机译：短波III族氮化物基激光二极管的现状
- 作者：Shuji Nakamura;Nichia Chemical Industries;Ltd.;Anan Tokushima;Japan.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
64.Simulation of GaInP laser diode structure

机译：GaInP激光二极管结构的仿真
- 作者：Peter Blood;Univ. of Wales Cardiff;Cardiff;United Kingdom;Damian Foulger;Univ. of Wales Cardiff;Cardiff;United Kingdom;Peter M. Smowton;Univ. of Wales Cardiff;Broseley Salop;United Kingdom;Phil A. Mawby;Univ. of Wales Swansea;Swansea Wales;United Kingdom.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
65.Simulation of laser sources for millimeter-wave signal generation

机译：模拟产生毫米波信号的激光源
- 作者：Phillip C. Gurney;Australian Photonics Cooperative Research Ctr./Univ. of Melbourne;Parkville Victoria;Australia;Arthur J. Lowery;Australian Photonics Cooperative Research Ctr./Univ. of Melbourne;Kew;Australia.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
66.Spectral domain modeling of distributed feedback lasers

机译：分布式反馈激光器的光谱域建模
- 作者：Andrew M. Sarangan;Univ. of Waterloo;Waterloo;ON;Canada;Wei-Ping Huang;Univ. of Waterloo;Waterloo;ON;Canada;Toshi Makino;Nortel Technologies Ltd.;Hamilton;ON;Canada.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
67.Ultralow phase noise in multigigahertz oscillations of injection-tracked DFB lasers

机译：注入跟踪DFB激光器在数GHz振荡中的超低相位噪声
- 作者：Herbert Burkhard;Deutsche Telekom AG;Darmstadt;Germany;H.Schoell;Deutsche Telekom AG;Darmstadt;Germany.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
68.Amplified spontaneous emission spectroscopy of strained quantum well lasers: theory and experiment

机译：应变量子阱激光器的自发放大光谱：理论与实验
- 作者：Shun Lien Chuang;Univ. of Illinois/Urbana-Champaign;Urbana;IL;USA;Chih S. Chang;Univ. of Illinois/Urbana-Champaign;Urbana;IL;USA;J.Minch;Univ. of Illinois/Urbana-Champaign;Urbana;IL;USA;Wei-Chiao W. Fang;Univ. of Illinois/Urbana-Champaign;Urbana;IL;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
69.Calculation of Auger recombination in long-wavelength lasers

机译：长波长激光器中俄歇复合的计算
- 作者：Mark Silver;Univ. of Surrey;Guildford Surrey;United Kingdom;Eoin P. OReilly;Univ. of Surrey;Guildford Surrey;United Kingdom;Alfred R. Adams;Univ. of Surrey;Guildford Surrey;United Kingdom.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
70.Coherent state of Wannier-Mott excitons: transformations of nonlinear spatial structures

机译：Wannier-Mott激子的相干态：非线性空间结构的变换
- 作者：Yuri I. Balkarey;Institute of Radio Engineering;Electronics;Moscow;Russia;Alexander S. Cohen;Institute of Radio Engineering;Electronics;Moscow;Russia;Mordukh I. Elinson;Institute of Radio Engineering;Electronics;Moscow;Russia;Michael G. Evtikhov;Institute of Radio Engineering;Electronics;Moscow;Russia;Vladimir S. Posvyanskii;Institute of Radio Engineering;Electronics;Moscow;Russia.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
71.Comparison of models for calculation of optical gain in gallium nitride

机译：氮化镓光学增益计算模型的比较
- 作者：Vladimir A. Smagley;Univ. of New Mexico;Albuquerque;NM;USA;Petr G. Eliseev;Univ. of New Mexico;Albuquerque;NM;USA;Marek Osinski;Univ. of New Mexico;Albuquerque;NM;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
72.Experimental study of physical parameters of semiconductor lasers

机译：半导体激光器物理参数的实验研究
- 作者：Gleb E. Shtengel;Lucent Technologies Bell Labs.;Murray Hill;NJ;USA;Paul A. Morton;Lucent Technologies Bell Labs.;Murray Hill;NJ;USA;Rudolf F. Kazarinov;Lucent Technologies Bell Labs.;Murray Hill;NJ;USA;D.A. Ackerman;Lucent Technologies Bell Labs.;Murray Hill;NJ;USA;Mark S. Hybertsen;Lucent Technologies Bell Labs.;Murray Hill;NJ;USA;Gregory L. Belenky;Lucent Technologies Bell Labs.;SUNY/Stony Brook;Murray Hill;NJ;USA;C. Lewis Reynolds;Jr.;Lucent Technologies Bell Labs.;Breinigsville;PA;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
73.Finite differencing of periodic structures

机译：周期结构的有限差分
- 作者：Jerry C. Chen;Lucent Technologies Bell Labs.;Holmdel;NJ;USA;Shanhui Fan;Massachusetts Institute of Technology;Cambridge;MA;USA;Atilla Mekis;Massachusetts Institute of Technology;Cambridge;MA;USA;I.Kurland;Massachusetts Institute of Technology;Cambridge;MA;USA;Pierre R. Villeneuve;Massachusetts Institute of Technology;Cambridge;MA;USA;K.Li;Massachusetts Institute of Technology;Cambridge;MA;USA;Hermann A. Haus;Massachusetts Institute of Technology;Cambridge;MA;USA;J.D. Joannopoulos;Massachusetts Institute of Technology;Cambridge;MA;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
74.Incorporating many-body effects into modeling of semiconductor lasers and amplifiers

机译：将多体效应纳入半导体激光器和放大器的建模中
- 作者：Cun Z. Ning;Univ. of Arizona;Moffett Field;CA;USA;Robert A. Indik;Univ. of Arizona;Tucson;AZ;USA;Jerome V. Moloney;Univ. of Arizona;Tucson;AZ;USA;Weng W. Chow;Sandia National Labs.;Sandia Park;NM;USA;Andreas Girndt;Philipps-Univ. Marburg;Marburg;Germany;Stephan W. Koch;Philipps-Univ. Marburg;Marburg;Germany;Rudolf H. Binder;Optical Sciences Ctr./Univ. of Arizona;Tucson;AZ;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
75.Investigation of the processes of propagation and diffraction of light in periodic mediums with sinusoidally modulated coupling coefficient

机译：正弦调制耦合系数的周期性介质中光的传播和衍射过程研究
- 作者：Galina I. Manankova;Scientific Research Ctr. for Technological Lasers;Troitsk;Moscow Region;Russia;Victor I. Sokolov;Scientific Research Ctr. for Technological Lasers;Troitsk Moscow Region;Russia.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
76.Optical gain of strained-layer hexagonal and cubic GaN quantum well lasers

机译：应变层六角和立方GaN量子阱激光器的光学增益
- 作者：Doyeol Ahn;Seoul City Univ.;Seoul;South Korea.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
77.Polarization bistability in vertical-cavity surface-emitting lasers

机译：垂直腔面发射激光器的偏振双稳性
- 作者：Hitoshi Kawaguchi;Yamagata Univ.;Yamagata;Japan.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
78.Polarization sensitivity of the amplification in semiconductor optical amplifiers

机译：半导体光放大器中放大的偏振灵敏度
- 作者：Taco D. Visser;Free Univ. Amsterdam;Delft Univ. of Technology;Amsterdam;Netherlands;Daan Lenstra;Free Univ. Amsterdam;Amsterdam;Netherlands;Hans Blok;Delft Univ. of Technology;Delft;Netherlands.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
79.Quasi-periodicity in semiconductor lasers

机译：半导体激光器的准周期
- 作者：G.Lythe;Univ. Libre de Bruxelles;Bruxelles;Belgium;Thomas Erneux;Univ. Libre de Bruxelles;Bruxelles;Belgium;Athanasios Gavrielides;Air Force Phillips Lab.;Kirtland AFB;NM;USA;Vassilios Kovanis;Air Force Phillips Lab.;Kirtland AFB;NM;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
80.Semiclassical analysis and experimental investigations of vertical-cavity surface-emitting laser noise

机译：垂直腔面发射激光噪声的半经典分析和实验研究
- 作者：Jean-Luc C. Vey;Technical Univ. Darmstadt;Darmstadt;Germany;Karsten Auen;Technical Univ. Darmstadt;Darmstadt;Germany;Wolfgang E. Elsaesser;Technical Univ. Darmstadt;Darmstadt;Germany.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
81.Theoretical calculation of turn-on delay time statistics of lasers under PRWM

机译：PRWM下激光器开启延迟时间统计的理论计算
- 作者：Luis Pesquera;Instituto de Fisica de Cantabria;Santander;Spain;J.Revuelta;Instituto de Fisica de Cantabria;Univ. de Cantabr ia;Santander;Spain;Angel Valle;Instituto de Fisica de Cantabria;Santander;Spain;M.A. Rodriguez;Instituto de Fisica de Cantabria;Santander;Spain.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
82.Ultrabroad-bandwidth in-line MQW GaAs/GaAlAs optical intensity modulator

机译：超宽带串联MQW GaAs / GaAlAs光强度调制器
- 作者：Milson T. Camargo Silva;Univ. de Sao Paulo;Sao Carlos SP;Brazil;Carlos A. de Francisco;Univ. de Sao Paulo;Sao Carlos SP;Brazil.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
83.Physics of excitations of a small number of quanta in microresonators

机译：微谐振器中少量量子的激发物理学
- 作者：Richard L. Fork;Univ. of Alabama in Huntsville;Huntsville;AL;USA;Vahid R. Riasati;Univ. of Alabama in Huntsville;Huntsville;AL;USA;Darryl K. Jones;Univ. of Alabama in Huntsville;Huntsville;AL;USA;Michael W. Jones;Univ. of Alabama in Huntsville;Huntsville;AL;USA;John O. Dimmock;Univ. of Alabama in Huntsville;Huntsville;AL;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
84.Radiation effects in the investigation of threshold gain and threshold current of circular-grating surface-emitting lasers

机译：圆光栅面发射激光器阈值增益和阈值电流研究中的辐射效应
- 作者：Ali M. Shams-Zadeh-Amiri;Univ. of Waterloo;Waterloo;ON;Canada;Wei-Ping Huang;Univ. of Waterloo;Waterloo;ON;Canada.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
85.Simulation of semiconductor quantum well lasers

机译：半导体量子阱激光器的仿真
- 作者：Muhammad A. Alam;Lucent Technologies Bell Labs.;Scotch Plains;NJ;USA;Mark S. Hybertsen;Lucent Technologies Bell Labs.;Murray Hill;NJ;USA;R.K. Smith;Lucent Technologies Bell Labs.;Murray Hill;NJ;USA;Gene A. Baraff;Lucent Technologies Bell Labs.;Murray Hill;NJ;USA;Mark R. Pinto;Lucent Technologies Bell Labs.;Murray Hill;NJ;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
86.Epitaxial growth and properties of cubic group III-nitride layers

机译：立方III族氮化物层的外延生长和性能
- 作者：D.Schikora;Univ.-Gesamthochschule Paderborn;Paderborn;Germany;B.Schoettger;Univ.-Gesamthochschule Paderborn;Paderborn;Germany;D.J. As;Univ.-Gesamthochschule Paderborn;Paderborn;Germany;K.Lischka;Univ.-Gesamthochschule Paderborn;Paderborn;Germany.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
87.Gain processes in blue-light-emitting quantum structures: the role of excitons and biexcitons

机译：蓝光量子结构中的增益过程：激子和双激子的作用
- 作者：Hans-Juergen Wuensche;Humboldt-Univ. zu Berlin;Berlin;Germany;Steffen Renisch;Humboldt-Univ. zu Berlin;Berlin;Germany;Fritz Henneberger;Humboldt-Univ. zu Berlin;Berlin;Germany.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年
88.Mutual entrainment in delay-coupled nonidentical semiconductor lasers

机译：延迟耦合的不同半导体激光器中的相互夹带
- 作者：A.Hohl;Air Force Phillips Lab.;Kirtland Afb;NM;USA;Athanasios Gavrielides;Air Force Phillips Lab.;Kirtland AFB;NM;USA;Thomas Erneux;Univ. Libre de Bruxelles;Bruxelles;Belgium;Vassilios Kovanis;Air Force Phillips Lab.;Kirtland AFB;NM;USA.
- 会议名称：《Physics and Simulation of Optoelectronic Devices V》 | 1997年