Integrated AlInAs/InGaAs HEMT/HBT heterostructure grown by MBE

摘要

We report on the integration of AlInAs/InGaAs HEMT and HBT on a single wafer by a single epitaxial growth sequence. The AlInAs/InGaAs emitter-base interface of the HBT is engineered to provide a pulse-doped HEMT structure. Both the HEMT and HBT characteristics are demonstrated successfully. Preliminary microwave measurements indicate both f/sub T/ and f/sub max/ are more than 20 GHz for integrated HEMTs with 1-/spl mu/m gatelength. This is the first demonstration of integrated HBT and HEMT operation on the same wafer without multiple regrowth sequences.