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Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

召开年：1995
召开地：Hokkaido
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1.Increased lifetime of aluminum-free LEDs on Si substrates grown by MOCVD

机译：通过MOCVD生长的Si基板上的无铝LED的使用寿命增加
- 作者：Egawa;T.;Tanaka;A.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
2.Influence of strain on exciton lifetime in AlGaInP/GaInP quantum wells

机译：应变对AlGaInP / GaInP量子阱中激子寿命的影响
- 作者：Domen;K.;Kondo;M.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
3.InGaAs insulated gate field effect transistors using silicon interlayer based passivation technique

机译：使用基于硅中间层的钝化技术的InGaAs绝缘栅场效应晶体管
- 作者：Suzuki;S.;Kodama;S.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
4.InGaAs/InAlAs/InP 1.55 /spl mu/m quantum wells with mass-dependent width-a useful building block for polarization-independent optical modulation

机译：具有质量相关宽度的InGaAs / InAlAs / InP 1.55 / splμ/ m量子阱-一个有用的构建模块，用于与偏振无关的光调制
- 作者：Hamakawa;A.;Ishihara;K.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
5.InGaAsP strained MQW-DFB lasers with high resonance frequency and low distortion for high speed analog transmission

机译：具有高谐振频率和低失真的InGaAsP应变MQW-DFB激光器，用于高速模拟传输
- 作者：Watanabe;H.;Aoyagi;T.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
6.InGaAsP/InP strained MQW laser with integrated mode size converter using the shadow masked growth technique

机译：具有集成模式尺寸转换器的InGaAsP / InP应变MQW激光器，采用阴影掩膜生长技术
- 作者：Moerman;I.;Vanderbauwhede;W.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
7.InP islands as self-assembled quantum structures

机译：InP岛作为自组装量子结构
- 作者：Reaves C.M.;Cevallos N.A.;Hsueh G.C.;Cheng Y.M.;Weinberg W.H.;Petroff P.M.;DenBaars S.P.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
8.InP/InGaAs collector-up heterojunction bipolar transistors fabricated using Fe-ion-implantation

机译：Fe离子注入制备的InP / InGaAs集电极向上异质结双极晶体管
- 作者：Yamahata;S.;Kurishima;K.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
9.InP/InGaAs nanofabrication and optical characterization

机译：InP / InGaAs纳米制造和光学表征
- 作者：Forchel A.;Schilling O.;Wang K.H.;Ils P.;Oshinowo J.;Kieseling F.;Braun W.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
10.InP-based HBTs and their perspective for microwave applications

机译：基于InP的HBT及其在微波应用中的前景
- 作者：Hin-Fai Chau;Liu W.;Beam E.A. III
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
11.InP-based heterojunction FET processing for high-reliability millimeter-wave applications

机译：用于高可靠性毫米波应用的基于InP的异质结FET处理
- 作者：Kuzuhara;M.;Onda;K.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
12.In-situ monolayer etching and regrowth of InP/InGaAsP

机译：InP / InGaAsP的原位单层蚀刻和再生
- 作者：Tsang W.T.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
13.Integrated AlInAs/InGaAs HEMT/HBT heterostructure grown by MBE

机译：MBE生长的AlInAs / InGaAs HEMT / HBT集成异质结构
- 作者：Chen Y.K.;Humphrey D.;Sivco D.;Cho A.Y.;Lothian J.;Kuo J.M.;Ren F.;Weiner J.S.;Tate A.;Chang M.F.;Bernescut R.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
14.Interface strain in InGaAs-InP superlattices

机译：InGaAs-InP超晶格中的界面应变
- 作者：Clawson A.R.;Hanson C.M.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
15.Investigation of a molecular beam epitaxy regrowth procedure using an in-situ H/sub 2/ plasma probed with an InP/InGaAs/InP quantum well

机译：使用InP / InGaAs / InP量子阱探测的原位H / sub 2 /等离子体研究分子束外延再生程序
- 作者：Drouot;V.;Robinson;B.J.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
16.Iron segregation in LEC InP crystals

机译：LEC InP晶体中的铁偏析
- 作者：Fornari R.;Moriglioni M.;Thirumavalavan M.;Zappettini A.;Zuccalli G.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
17.Island growth and phase separation in strained InAs/sub 1-x/P/sub x//InP heterostructures

机译：InAs / sub 1-x / P / sub x // InP异质结构中的岛生长和相分离
- 作者：Tweet;D.J.;Matsuhata;H.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
18.Large-signal characteristics of InP-based heterojunction bipolar transistors and their use in optoelectronic preamplifier design

机译：基于InP的异质结双极晶体管的大信号特性及其在光电前置放大器设计中的应用
- 作者：Samelis;A.;Pavlidis;D.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
19.Lattice-matched In/sub 0.29/Al/sub 0.71/As/In/sub 0.3/Ga/sub 0.7/As doped-channel FETs

机译：晶格匹配的In / sub 0.29 / Al / sub 0.71 / As / In / sub 0.3 / Ga / sub 0.7 / As掺杂通道FET
- 作者：Ming-Ta Yang;Yi-Jen Chan
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
20.Leading-edge optoelectronic device production using two-inch technology

机译：采用两英寸技术的尖端光电设备生产
- 作者：Simes;R.;Capella;R.M.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
21.Low noise optimization of InP HEMTs

机译：InP HEMT的低噪声优化
- 作者：Klepser B.-U.H.;Bergamaschi C.;Schefer M.;Patrick W.;Bachtold W.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
22.Low temperature grown Be-doped InAlP band offset reduction layer to p-type ZnSe

机译：低温生长的Be掺杂InAlP带隙减小层到p型ZnSe
- 作者：Iwata;K.;Asahi;H.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
23.Low temperature impurity-induced disordering of AlGaInAs/InP quantum wells for long wavelength optoelectronic applications

机译：低温杂质引起的长波长光电应用中的AlGaInAs / InP量子阱的无序化
- 作者：Itaya;K.;Mondry;M.J.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
24.Low-frequency noise phenomena in InP-based HFETs related to stress induced degeneration and interface properties

机译：基于InP的HFET中的低频噪声现象与应力引起的退化和界面特性有关
- 作者：Sommer;V.;Kohl;A.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
25.Low-frequency trapping phenomena in AlSb/InAs HEMTs

机译：AlSb / InAs HEMT中的低频陷获现象
- 作者：Kruppa W.;Boos J.B.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
26.Low-noise, high-speed Ga/sub 0.47/In/sub 0.53/As/Al/sub 0.48/In/sub 0.52/As 0.1-/spl mu/m MODFETs and high-gain/bandwidth three-stage amplifier fabricated on GaAs substrate

机译：低噪声，高速Ga / sub 0.47 / In / sub 0.53 / As / Al / sub 0.48 / In / sub 0.52 / As 0.1- / splμ/ m MODFET和在其上制造的高增益/带宽三级放大器GaAs衬底
- 作者：Rohdin;H.;Nagy;A.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
27.Low-temperature CAIBE processes for InP-based optoelectronics

机译：基于InP的光电技术的低温CAIBE工艺
- 作者：Daleiden J.;Eisele K.;Ralston J.D.;Vollrath G.;Fiedler F.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
28.Magneto-luminescence study of strain and lateral confinement effects in InAs/sub 0.48/P/sub 0.52//InP quantum well wires

机译：InAs / sub 0.48 / P / sub 0.52 // InP量子阱线中的应变和横向约束效应的磁致发光研究
- 作者：Hammersberg;J.;Notomi;M.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
29.Metalorganic vapour phase epitaxy of InP using the novel P-source ditertiarybutyl phosphine (DitBuPH)

机译：使用新型P源二叔丁基膦（DitBuPH）的InP的金属有机气相外延
- 作者：Protzmann;H.;Spika;Z.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
30.Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with composite channels and f/sub max/ of 350 GHz

机译：具有复合通道且f / sub max /为350 GHz的GaAs衬底上的变质InAlAs / InGaAs HEMT
- 作者：Chertouk;M.;Heiss;H.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
31.Microwave performance of InP-based HEMTs for low voltage application fabricated by optical lithography

机译：光刻技术制备的基于InP的HEMT在低压应用中的微波性能
- 作者：Strahle;S.;Henle;B.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
32.MOCVD growth and characterization of tensile-strained Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/ quantum wells for low threshold lasers emitting at 1.3 /spl mu/m

机译：用于以1.3 / spl mu / m发射的低阈值激光的拉伸应变Ga / sub x / In / sub 1-x / As / sub y / P / sub 1-y /量子阱的MOCVD生长和表征
- 作者：Yokouchi;N.;Yamanaka;N.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
33.MOCVD regrowth of InP:Fe, Zn and Si doped on patterned surface by pulsed metalorganic epitaxy (PME)

机译：脉冲金属有机外延（PME）掺杂在图案化表面上的InP：Fe，Zn和Si的MOCVD再生长
- 作者：Bertone;D.;Fornuto;G.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
34.Molecular beam epitaxial growth of MgZnCdSe on (100) InP substrates

机译：MgZnCdSe在（100）InP衬底上的分子束外延生长
- 作者：Morita T.;Kikuchi A.;Nomura I.;Kishino K.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
35.MOMBE growth of heavily carbon-doped n-type InP using tertiarybutylphosphine (TBP)

机译：使用叔丁基膦（TBP）MOMBE生长重碳掺杂的n型InP
- 作者：Oh;J.-H.;Shirakashi;J.-I.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
36.MOMBE growth of InGaAsP films for optoelectronic devices

机译：用于光电器件的InGaAsP膜的MOMBE生长
- 作者：Sugiura H.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
37.Monolayer growth in InP/GaInAs quantum wells grown by selective area MOVPE

机译：通过选择区域MOVPE生长的InP / GaInAs量子阱中的单层生长
- 作者：Ottenwalder;D.;Frankowsky;G.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
38.Monolithic integration of GaInAsP/InP collimating GRIN lens with tapered waveguide active region

机译：GaInAsP / InP准直GRIN透镜与锥形波导有源区的单片集成
- 作者：El Yumin;S.;Arai;S.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
39.Morphological and electrical characterization of Al/Ni-InP contacts with tapered Ni-layer for MESFET

机译：具有锥形Ni层的Al / Ni / n-InP触点的形态和电学特性用于MESFET
- 作者：Miyazaki;S.;Lin;T.-C.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
40.MOVPE-overgrowth for buried InP/(In,Ga)(As,P) laser diode arrays

机译：埋入式InP /（In，Ga）（As，P）激光二极管阵列的MOVPE过生长
- 作者：Knauer A.;Vogel K.;Zeimer U.;Pittroff W.;Weyers M.;Wolter P.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
41.Multicomponent zone melting growth of ternary InGaAs bulk crystal

机译：三元InGaAs块状晶体的多组分区熔化生长。
- 作者：Suzuki T.;Kusunoki T.;Katoh T.;Nakajima R.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
42.Multi-wavelength DFB laser arrays grown by in-plane thickness control epitaxy

机译：通过面内厚度控制外延生长的多波长DFB激光器阵列
- 作者：Aoki;M.;Suzuki;M.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
43.New approach for high-speed, high-sensitivity photodetectors

机译：高速，高灵敏度光电探测器的新方法
- 作者：I-Hsing Tan;Bowers J.E.;Hu E.L.;Miller B.I.;Capik R.J.
- 会议名称：《》 | 1995年
44.New quantum functional devices. Present status and future prospects of RHET technology

机译：新的量子功能器件。 RHET技术的现状和未来展望
- 作者：Yokoyama;N.;Muto;S.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
45.0.1-/spl mu/m InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD

机译：0.1- / spl mu / m InAlAs / InGaAs HEMT，具有通过MOCVD生长的InP刻蚀停止层
- 作者：Enoki;T.;Ito;H.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
46.1.3 /spl mu/m GaInAsP/InP square buried heterostructure vertical cavity surface emitting laser grown by all MOCVD

机译：全部MOCVD生长的1.3 / spl mu / m GaInAsP / InP方形掩埋异质结构垂直腔表面发射激光器
- 作者：Uchiyama;S.;Kashiwa;S.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
47.1.5 /spl mu/m sub-picosecond pulse generation from an InGaAsP DFB diode laser synchronized with a mode-locked Ti:sapphire laser

机译：InGaAsP DFB二极管激光器与锁模Ti：蓝宝石激光器同步产生的1.5 / splμ/ m亚皮秒脉冲
- 作者：Takeshita;H.;Tsuchiya;M.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
48.40-Gb/s-class InP HEMT ICs for very-high-speed optical communications

机译：40 Gb / s级InP HEMT IC，用于超高速光通信
- 作者：Imai;Y.;Nakamura;M.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
49.60 GHz monolithic LNA utilizing high-speed InAlAs/InGaAs/InP HEMTs and coplanar waveguides

机译：利用高速InAlAs / InGaAs / InP HEMT和共面波导的60 GHz单片LNA
- 作者：Berg;M.;Dickmann;J.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
50.680 nm-band self-sustained pulsating AlGaInP visible laser diodes

机译：680 nm波段自持脉动AlGaInP可见激光二极管
- 作者：Adachi H.;Kidoguchi I.;Kamiyama S.;Ohnaka K.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
51.9 GHz bandwidth InP-based integrated PIN-HBT photoreceiver

机译：基于InP的9 GHz带宽集成PIN-HBT光电接收器
- 作者：Gutierrez-Aitken A.L.;Yang K.;Zhang X.;Haddad G.I.;Bhattacharya P.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
52.A comparative study of the low frequency noise in InP based heterojunction field effect transistors (HFETs)

机译：基于InP的异质结场效应晶体管（HFET）中低频噪声的比较研究
- 作者：Rojo-Romeo;P.;Viktorovitch;P.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
53.A monolithically integrated logic photoreceiver with double-heterojunction bipolar transistors

机译：具有双异质结双极晶体管的单片集成逻辑光电接收器
- 作者：Yoneyama;M.;Sano;E.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
54.A strained InAlAs/InGaAs superlattice avalanche photodiode for operation at an IC-power-supply voltage

机译：应变式InAlAs / InGaAs超晶格雪崩光电二极管，用于在IC电源电压下工作
- 作者：Hanatani;S.;Shishikura;M.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
55.A technology for monolithic integration of high-indium-fraction resonant-tunneling diodes with commercial MESFET VLSI electronics

机译：高铟分数谐振隧道二极管与商用MESFET VLSI电子器件的单片集成技术
- 作者：Aggarwal;R.J.;Shenoy;K.V.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
56.Novel current-blocking laser structures using directly-bonded InP-SiO/sub 2/-InP

机译：使用直接键合InP-SiO / sub 2 / -InP的新型电流阻挡激光器结构
- 作者：Wada;H.;Ogawa;Y.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
57.Novel self-aligned sub-micron emitter InP/InGaAs HBT's using T-shaped emitter electrode

机译：使用T形发射极的新型自对准亚微米发射极InP / InGaAs HBT
- 作者：Masuda;H.;Tanoue;T.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
58.Optical and electrical properties of InN grown by the atomic layer epitaxy

机译：原子层外延生长的InN的光电性能
- 作者：Inushima;T.;Yaguchi;T.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
59.Optical and structural properties of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multiple quantum wells grown on vicinal (110) InP substrates by molecular beam epitaxy

机译：In / sub 0.53 / Ga / sub 0.47 / As / In / sub 0.52 / Al / sub 0.48 / As的光学和结构性质是通过分子束外延在邻近（110）InP衬底上生长的多个量子阱
- 作者：Asai;H.;Oe;K.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
60.Optical networks towards the 21st century and the role of InP-based devices

机译：面向21世纪的光网络和基于InP的设备的作用
- 作者：Yamashita;I.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
61.Optical properties of self-organized InGaAs/InP dots

机译：自组织InGaAs / InP点的光学性质
- 作者：Ahopelto J.;Lipsanen H.;Sopanen M.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
62.Optically controlled S- and N- shaped negative differential resistances by R-TOPS

机译：通过R-TOPS光控S型和N型负差分电阻
- 作者：Sakata;H.;Utaka;K.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
63.Photoellipsometry characterization of electronic properties for InP

机译：椭偏光度法表征InP的电子性质
- 作者：Saitoh T.;Nakamura K.;Yi-Ming Xiong;Hasegawa H.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
64.Photoluminescence investigation of InGaAs/InP quantum wells grown by gas-source molecular-beam epitaxy with source-supply interruption

机译：源间断气体源分子束外延生长InGaAs / InP量子阱的光致发光研究
- 作者：Hosomi;K.;Mozume;T.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
65.Photopumped operation of dry etched /spl lambda/=1.5 /spl mu/m vertical cavity surface emitting lasers

机译：干蚀刻/ splλ/ = 1.5 / spl mu / m垂直腔表面发射激光器的光泵操作
- 作者：Streubel;K.;Andre;J.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
66.Planar InP burying growth around a dry-etched mesa by addition of CH/sub 3/Cl during MOVPE

机译：在MOVPE期间通过添加CH / sub 3 / Cl将平面InP埋藏在干蚀刻台面周围
- 作者：Takeuchi;T.;Yamazaki;S.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
67.Preparation and optical characterization of nanoscale InP islands embedded in In/sub 0.48/Ga/sub 0.52/P

机译：嵌入In / sub 0.48 / Ga / sub 0.52 / P的纳米级InP岛的制备和光学表征
- 作者：Kurtenbach;A.;Eberl;K.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
68.Preparation of homogeneous InP substrates by VGF-growth and wafer annealing

机译：通过VGF生长和晶片退火制备均质InP衬底
- 作者：Hirt;G.;Hoffmann;B.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
69.Pyramidal shaped pit formation on InAlAs/Fe-doped InP structures grown by MOCVD

机译：MOCVD生长的InAlAs / Fe掺杂InP结构上的金字塔形凹坑形成
- 作者：Noda;T.;Sasaki;A.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
70.Raman scattering study of the clustering phenomena in InGaAsP grown by LPE on (100) and (111) GaAs

机译：拉曼散射研究了LPE在（100）和（111）GaAs上生长的InGaAsP中的聚集现象
- 作者：Sugiura;T.;Hase;N.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
71.Raman spectroscopy study on order-disordered Ga/sub 0.52/In/sub 0.48/P on GaAs grown by MOVPE

机译：拉曼光谱研究MOVPE生长的GaAs上无序Ga / sub 0.52 / In / sub 0.48 / P
- 作者：Uchida;K.;Yu;P.Y.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
72.Reduced lattice distortion in and near strain-compensated InGaAs/InGaAsP multiple-quantum well structures grown by metal-organic vapor phase epitaxy on GaAs substrates

机译：在GaAs衬底上通过金属-有机气相外延生长的应变补偿的InGaAs / InGaAsP多量子阱结构中和附近的晶格畸变减少
- 作者：Hiramoto;K.;Sagawa;M.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
73.Reduction of dislocation densities in InP single crystals by the TB-LEC method

机译：TB-LEC方法降低InP单晶中的位错密度
- 作者：Hirano;R.;Uchida;M.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
74.Reduction of inelastic scattering effect by introducing strain-compensated superlattice into GaInAs/GaInP multi-quantum barriers

机译：通过将应变补偿超晶格引入GaInAs / GaInP多量子势垒来减少非弹性散射效应
- 作者：Terhoe Loh;Miyamoto;T.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
75.Regrowth of semi-insulating iron doped InP around crossed laser mesas by hydride vapor phase epitaxy

机译：氢化物气相外延使半绝缘掺铁InP在交叉激光台面周围再生
- 作者：Miyazawa;T.;Kobayashi;F.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
76.Reliability analysis of InP-based HBTs

机译：基于InP的HBT的可靠性分析
- 作者：Doguchi K.;Yano H.;Murata M.;Nishizawa H.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
77.Ruthenium and sulfide passivation of In/sub 0.53/Ga/sub 0.47/As

机译：In / sub 0.53 / Ga / sub 0.47 / As的钌和硫化物钝化
- 作者：Ali;S.T.;Kumar;A.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
78.Selective area growth of InP by plasma assisted solid-source epitaxy

机译：等离子体辅助固体源外延生长InP的选择性区域
- 作者：Aller;I.;Hartnagel;H.L.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
79.Selective MOCVD growth of InP around dry-etched mesas with various patterns for photonic integrated circuits

机译：InP在干蚀刻台面周围的InMO选择性生长，具有用于光子集成电路的各种图案
- 作者：Goto;K.;Takemi;M.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
80.Selective MOVPE growth of InGaAsP and InGaAs using TBA and TBP

机译：使用TBA和TBP的InGaAsP和InGaAs的选择性MOVPE生长
- 作者：Sakata Y.;Nakamura T.;Ae S.;Terakado T.;Inomoto Y.;Torikai T.;Hasumi H.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
81.Self-organization phenomenon of strained InGaAs grown on InP (311) substrates by metalorganic vapor phase epitaxy

机译：金属有机气相外延生长在InP（311）衬底上的应变InGaAs的自组织现象
- 作者：Temmyo;J.;Kozen;A.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
82.Simulation of Raman scattering from nonequilibrium phonons in InP and InAs

机译：InP和InAs中非平衡声子拉曼散射的模拟
- 作者：Ferry;D.K.;Grann;E.D.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
83.Simultaneous thickness and compositional uniformity in selective MOVPE growth

机译：MOVPE选择性生长的同时厚度和成分均匀性
- 作者：Ekawa;M.;Fujii;T.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
84.Single-step annealing of Be and Si implants in S.I. InP to minimize Be redistribution in the completed p/sup +/ junctions

机译：对S.I. InP中的Be和Si植入物进行单步退火，以最大程度地减少完成的p / sup + // n结中的Be重新分布
- 作者：Molnar;B.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
85.Spacer design to improve the breakdown voltage of InAlAs-InGaAs HEMTs

机译：垫片设计可提高InAlAs-InGaAs HEMT的击穿电压
- 作者：Tardy;J.;Letartre;X.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
86.SPICE-based DC and microwave characterization of InAlAs/InGaAs HBTs used for large-bandwidth integrated transimpedance amplifiers

机译：基于SPICE的InAlAs / InGaAs HBT的DC和微波表征用于大带宽集成跨阻放大器
- 作者：Yang;K.;Gutierrez-Aitken;A.L.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
87.Spinodal-like decomposition of InGaAsP/InP grown by gas source molecular beam epitaxy

机译：气源分子束外延生长InGaAsP / InP的旋节状分解
- 作者：LaPierre;R.R.;Okada;T.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
88.Stable and low chirp 1.55 /spl mu/m complex-coupled DFB lasers with absorptive grating

机译：具有吸收光栅的稳定低low 1.55 / spl mu / m复耦合DFB激光器
- 作者：Chuang;Z.M.;Wang;C.Y.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
89.Strain effects in InAsP/InP MQW modulators for 1.06 /spl mu/m operation

机译：InAsP / InP MQW调制器中的应变效应，用于1.06 / spl mu / m操作
- 作者：Stavrinou;P.N.;Haywood;S.K.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
90.Study of As/sub 4/ beam induced P-As exchange reaction on InP surface by photoluminescence and X-ray diffraction

机译：用光致发光和X射线衍射研究As / sub 4 /束InP表面上的P-As交换反应
- 作者：Yang;B.X.;He;L.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
91.Study on microscopic defects in Fe-doped InP single crystals

机译：掺铁InP单晶的微观缺陷研究
- 作者：Kohiro K.;Hirano R.;Oda O.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
92.Superconducting weak link devices using lead alloy-InAs/AlGaSb heterostructures

机译：使用铅合金-InAs / AlGaSb异质结构的超导弱链接器件
- 作者：Maemoto;T.;Izumiya;S.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
93.Superior confinement of two-dimensional electron gas in an In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As modulation-doped structure by inserting a strained InAs quantum well

机译：通过插入应变InAs量子阱，将二维电子气更好地限制在In / sub 0.52 / Al / sub 0.48 / As-In / sub 0.53 / Ga / sub 0.47 / As调制掺杂的结构中
- 作者：Akazaki;T.;Nitta;J.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
94.Surface damage on InP induced by photo- and plasma-assisted chemical vapor deposition of passivation films

机译：光和等离子体辅助化学气相沉积钝化膜对InP造成的表面损伤
- 作者：Hashizume;T.;Hasegawa;H.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
95.Surface step arrangements and configurations during molecular beam epitaxial growth on slightly misoriented (110) InP substrates

机译：在分子束外延生长期间，在取向不佳的（110）InP衬底上的表面台阶排列和配置
- 作者：Nakata;Y.;Ueda;O.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
96.TEM evaluation of ordered and modulated structures in GaAsSb crystals grown on 110InP substrates by molecular beam epitaxy

机译：用分子束外延法在110 InP衬底上生长的GaAsSb晶体中的有序和调制结构的TEM评估
- 作者：Ueda;O.;Nakata;Y.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
97.Temperature dependence of InGaAsP electro-absorption modulator module

机译：InGaAsP电吸收调制器模块的温度依赖性
- 作者：Tanaka;H.;Horita;M.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
98.Temporally resolved selective regrowth of InP around 110 and 1~10 directional mesas

机译：InP在110和1〜10定向台面周围的暂时解析选择性再生长
- 作者：Lourdudoss;S.;Messmer;E.R.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
99.Tensile strained MQW semiconductor optical amplifier

机译：拉伸应变MQW半导体光放大器
- 作者：Yamaguchi Y.;Yamada A.;Otsubo T.;Shinone K.;Miyagi K.;Taniguchi A.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年
100.The determination of atomic plane on InP (001) surface by CAICISS

机译：CAICISS测定InP（001）表面的原子平面
- 作者：Nishihara T.;Shinohara M.;Ishiyama O.;Ohtani F.;Yoshimoto M.;Maeda T.;Koinuma H.
- 会议名称：《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》 | 1995年