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Structure and a method for monolithic integration of HBT, depletion-mode HEMT and enhancement-mode HEMT on the same substrate
Structure and a method for monolithic integration of HBT, depletion-mode HEMT and enhancement-mode HEMT on the same substrate
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机译:HBT,耗尽型HEMT和增强型HEMT的单片集成的结构和方法
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摘要
An epitaxial layers structure and a method for fabricating HBTs and HEMTs on a common substrate are disclosed. The epitaxial layers comprise generally a set of HBT layers on the top of a set of HEMT layers. The method can be used to fabricate HBT, E-mode HEMT and D-mode HEMT as well as passive devices, that enabling monolithic integration of a significant number of devices on a common substrate by a cost-effective way.
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